{"created":"2021-03-01T06:17:01.827112+00:00","id":10217,"links":{},"metadata":{"_buckets":{"deposit":"99ae82ec-e148-4dd3-afa8-53690b0b74df"},"_deposit":{"id":"10217","owners":[],"pid":{"revision_id":0,"type":"depid","value":"10217"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00010217","sets":["320:321:322"]},"author_link":["30920","30921","30922","30923","30924"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"108","bibliographicPageStart":"107","bibliographicVolumeNumber":"893","bibliographic_titles":[{"bibliographic_title":"AIP Conference Proceedings","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Interfacial properties of InAs quantum dots (QDs) grown by a double-cap method in metalorganic chemical vapor deposition have been investigated by cross-sectional scanning tunneling microscopy (XSTM). XSTM images reveal that top and bottom interfaces of the InAs QD are extremely sharp. QDs with a monolayer-stepped height in the range 6–14 ML are observed, which indicates that the double-cap method can produce QDs with a well-defined height.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.1063/1.2729793"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/12037"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institite of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.2729793","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0094-243X","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Akanuma, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30920","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamakawa, I.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30921","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakuma, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30922","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Usuki, T.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30923","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakamura, A.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30924","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"24985411.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"24985411.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/10217/files/24985411.pdf"},"version_id":"2d3e54f7-42ed-45ad-8844-6607b026b27d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"quantum dots","subitem_subject_scheme":"Other"},{"subitem_subject":"interfacial structure","subitem_subject_scheme":"Other"},{"subitem_subject":"scanning tunneling microscopy","subitem_subject_scheme":"Other"},{"subitem_subject":"Ⅲ-V compounds semiconductor","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-08-17"},"publish_date":"2009-08-17","publish_status":"0","recid":"10217","relation_version_is_last":true,"title":["Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:56:04.186529+00:00"}