@article{oai:nagoya.repo.nii.ac.jp:00010319,
 author = {Ju, Yang and Liu, Linsheng},
 journal = {2nd Electronics Systemintegration Technology Conference (ESTC 2008)},
 month = {Sep},
 note = {Doped GaAs is the most important material in semiconductor industry. In this paper, we demonstrated a nondestructive method to measure the conductivity of GaAs wafers using a compact microwave instrument. In the experiment, 8 different GaAs wafers with thickness larger than 350 μm, and with resistivities in the range of 1.33 times 10^{-3}Ω・cm to 10.4 times 10^{-3} Ω・cm were measured. By using the intersection points of the evaluation curves obtained from known-resistivity wafer samples and the detected voltages for unknown-resistivity wafers, a nondestructive measurement method to determine the conductivity of GaAs wafer was realized. The measurement results are in agreement well with that obtained by using Hall effect measurement method.},
 pages = {205--208},
 title = {Nondestructive Measurement of Conductivity of Doped GaAs Using Compact Microwave Instrument},
 year = {2008}
}