{"created":"2021-03-01T06:17:08.253533+00:00","id":10319,"links":{},"metadata":{"_buckets":{"deposit":"12ab8db8-8528-4e02-a5c3-de6614d300f3"},"_deposit":{"id":"10319","owners":[],"pid":{"revision_id":0,"type":"depid","value":"10319"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00010319","sets":["320:502:503"]},"author_link":["31302","31303"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-09","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"208","bibliographicPageStart":"205","bibliographic_titles":[{"bibliographic_title":"2nd Electronics Systemintegration Technology Conference (ESTC 2008)","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Doped GaAs is the most important material in semiconductor industry. In this paper, we demonstrated a nondestructive method to measure the conductivity of GaAs wafers using a compact microwave instrument. In the experiment, 8 different GaAs wafers with thickness larger than 350 μm, and with resistivities in the range of 1.33 times 10^{-3}Ω・cm to 10.4 times 10^{-3} Ω・cm were measured. By using the intersection points of the evaluation curves obtained from known-resistivity wafer samples and the detected voltages for unknown-resistivity wafers, a nondestructive measurement method to determine the conductivity of GaAs wafer was realized. The measurement results are in agreement well with that obtained by using Hall effect measurement method.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.1109/ESTC.2008.4684350"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/12139"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1109/ESTC.2008.4684350","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © 2008 IEEE. Reprinted from 2nd Electronics Systemintegration Technology Conference, 2008. ESTC 2008. p.205-208.<br/>This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Nagoya University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ju, Yang","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"31302","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Liu, Linsheng","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"31303","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"205.pdf","filesize":[{"value":"739.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"205.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/10319/files/205.pdf"},"version_id":"3f755316-113b-463b-a664-1988788a1427"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Nondestructive Measurement of Conductivity of Doped GaAs Using Compact Microwave Instrument","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Nondestructive Measurement of Conductivity of Doped GaAs Using Compact Microwave Instrument","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["503"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-09-01"},"publish_date":"2009-09-01","publish_status":"0","recid":"10319","relation_version_is_last":true,"title":["Nondestructive Measurement of Conductivity of Doped GaAs Using Compact Microwave Instrument"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:56:20.044864+00:00"}