@article{oai:nagoya.repo.nii.ac.jp:00010788,
 author = {Yamashita, Masatsugu and Otani, Chiko and Kawase, Kodo and Matsumoto, Toru and Nikawa, Kiyoshi and Kim, Sunmi and Murakami, Hironaru and Tonouchi, Masayoshi},
 issue = {19},
 journal = {APPLIED PHYSICS LETTERS},
 month = {May},
 note = {We have developed a laser terahertz emission microscope utilizing excitation laser pulses at 1.06 μm wavelength for the inspection and localization of electrical failures in large-scale integrated circuits with multilayered interconnection structures. The system enables to measure terahertz emission images from the backside of a large-scale integrated circuits chip with a multilayered interconnection structure that prevents the observation from the front side. By comparing the terahertz emission images, we successfully distinguish a normal circuit from damaged ones with different positions of the interconnection defects without any electrical probing.},
 pages = {191104--191104},
 title = {Backside observation of large-scale integrated circuits with multilayered interconnections using laser terahertz emission microscope},
 volume = {94},
 year = {2009}
}