{"created":"2021-03-01T06:17:38.421194+00:00","id":10789,"links":{},"metadata":{"_buckets":{"deposit":"515599ce-2728-4ea7-a36c-8bea4a01eb7f"},"_deposit":{"id":"10789","owners":[],"pid":{"revision_id":0,"type":"depid","value":"10789"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00010789","sets":["673:674:675"]},"author_link":["32411","32412","32413","32414","32415"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-03-18","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"113505","bibliographicPageStart":"113505","bibliographicVolumeNumber":"94","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A broadband terahertz time-domain spectroscopy (TDS) system for frequencies of up to 15 THz, including the phonon resonance frequency range, has been developed using a transferred thin-film photoconductive switch (PCS) detector. The thin-film PCSs, based on low-temperature-grown GaAs, were fabricated using epitaxial layer transfer onto high-resistivity Si substrates. We observed a reduction of phonon resonant absorption, including between 7 and 10 THz, in a forward radiation configuration. Numerically calculated absorption spectra show good agreement with our experimental results. This technique will provide compact, broadband TDS systems.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/12632"},{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.1063/1.3103278"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institite of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.3103278","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior per　mission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kasai, S","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"32411","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Katagiri, T","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"32412","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takayanagi, J","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"32413","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawase, K","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"32414","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ouchi, T","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"32415","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"ApplPhysLett_94_113505.pdf","filesize":[{"value":"109.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ApplPhysLett_94_113505.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/10789/files/ApplPhysLett_94_113505.pdf"},"version_id":"be6ad1b2-0763-46d3-b30b-7afc05d6296c"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"epitaxial layers","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium arsenide","subitem_subject_scheme":"Other"},{"subitem_subject":"III-V semiconductors","subitem_subject_scheme":"Other"},{"subitem_subject":"phonons","subitem_subject_scheme":"Other"},{"subitem_subject":"photoconducting switches","subitem_subject_scheme":"Other"},{"subitem_subject":"terahertz wave spectra","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2010-01-21"},"publish_date":"2010-01-21","publish_status":"0","recid":"10789","relation_version_is_last":true,"title":["Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:48:45.481546+00:00"}