{"created":"2021-03-01T06:17:55.455750+00:00","id":11054,"links":{},"metadata":{"_buckets":{"deposit":"6c8a2006-f22d-4e80-864f-195aa8ff7170"},"_deposit":{"id":"11054","owners":[],"pid":{"revision_id":0,"type":"depid","value":"11054"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00011054","sets":["320:1092:1093"]},"author_link":["33521","33522","33523","33524"],"item_1618209983323":{"attribute_name":"助成情報","attribute_value_mlt":[{"subitem_award_numbers":{"subitem_award_number":"60460120","subitem_award_uri":"https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-60460120"},"subitem_award_titles":[{"subitem_award_title":"プラズマプロセシング用SiH⊂のラジカル非発光種に関する研究","subitem_award_title_language":"ja"}],"subitem_funder_identifiers":{"subitem_funder_identifier":"https://doi.org/10.13039/501100001691","subitem_funder_identifier_type":"Crossref Funder"},"subitem_funder_names":[{"subitem_funder_name":"日本学術振興会","subitem_funder_name_language":"ja"}]}]},"item_19_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1987-03","bibliographicIssueDateType":"Issued"}}]},"item_19_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Si【H_4】はアモルファスシリコン膜作製に用いられる重要な分子であるが、その電子衝突過程の研究は十分行われていない。本研究の目的は、各種の分光計測法を用いて、Si【H_4】への電子衝突によって生じるラジカル発光種の発光断面積、カスケ-ドを除去した生成断面積、寿命を測定し、更にその結果を利用して、SiHラジカル非発光種の生成断面積を決定することである。本研究は60年度から61年度にかけて行われ、次の成果を得た。 1.ビ-ム法と光子計数法を用いて、Si【H_4】への電子衝突によって生じるラジカル発光種(Si【H^*】,【Si^*】,【H^*】)の発光断面積を0-100evの電子エネルギ-領域で決定した。この研究によって、He線を基準として用い、絶対量の測定をせずに、ラジカル種の発光断面積を決定する方法を確立した。 2.遅延一致法を用いて、【Si^*】及びSi【H^*】ラジカル発光種からの遷移の発光減衰測定を行い、発光種の寿命、カスケ-ドの寄与の割合を求めた。またこの結果と1の結果を組合せて、【Si^*】(4S,4P,3d,【3P^3】)準位,Si【H^*】(【A^2】△)準位の生成断面積(10ueV)を決定した。この生成断面積は本研究で初めて測定されたものであり、発光断面積と共にプラズマの物性解明を行う際の有用なデ-タである。 3.色素レ-ザを用いたレ-ザ誘起蛍光法(LIF法)を利用して、SiH(【A^2】△)に属する個々の振動回転準位の寿命を求めた。 4.LIF法及び時間分解分光法を用い、更に1〜3の結果を利用して、SiHラジカル非発光種(【X^2】Π)の電子衝突生成断面積を決定する方法を考え、予備測定を行った。この測定は現在も続行中であるが、今後SIN比の改善レ-ザ出力の増加を計ることによって、最終的な結果を得ることができると思われる。","subitem_description_language":"ja","subitem_description_type":"Abstract"}]},"item_19_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"科学研究費補助金 研究種目:一般研究(B) 課題番号:17520427 研究代表者:後藤 俊夫 研究期間:1985-1986年度","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_19_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/12922"}]},"item_19_relation_40":{"attribute_name":"シリーズ","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"科学研究費補助金;一般研究(B);60460120"}]}]},"item_19_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_19_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"後藤, 俊夫","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"33521","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"稲葉, 成基","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"33522","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"羽根, 一博","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"33523","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"河野, 明広","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"33524","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"60460120.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"60460120.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/11054/files/60460120.pdf"},"version_id":"fbd62c3b-ae8b-4213-a9cf-63de65b61d8c"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"LIF法","subitem_subject_scheme":"Other"},{"subitem_subject":"電子衝突","subitem_subject_scheme":"Other"},{"subitem_subject":"ラジカル非発光種","subitem_subject_scheme":"Other"},{"subitem_subject":"Lifetime","subitem_subject_scheme":"Other"},{"subitem_subject":"Electron Collision","subitem_subject_scheme":"Other"},{"subitem_subject":"Non-Emissive Radical","subitem_subject_scheme":"Other"},{"subitem_subject":"Plasma Processing","subitem_subject_scheme":"Other"},{"subitem_subject":"生成断面積","subitem_subject_scheme":"Other"},{"subitem_subject":"寿命","subitem_subject_scheme":"Other"},{"subitem_subject":"Emission Cross Section","subitem_subject_scheme":"Other"},{"subitem_subject":"Si【H_4】","subitem_subject_scheme":"Other"},{"subitem_subject":"プラズマプロセシング","subitem_subject_scheme":"Other"},{"subitem_subject":"発光断面積","subitem_subject_scheme":"Other"},{"subitem_subject":"<SiH_4>","subitem_subject_scheme":"Other"},{"subitem_subject":"Level Excitation Cross Section","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research 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