{"created":"2021-03-01T06:18:05.116179+00:00","id":11207,"links":{},"metadata":{"_buckets":{"deposit":"01747645-8595-461c-8912-22a1a09a39ee"},"_deposit":{"id":"11207","owners":[],"pid":{"revision_id":0,"type":"depid","value":"11207"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00011207","sets":["320:1092:1093"]},"author_link":["33916","33917","33918","33919"],"item_1618209983323":{"attribute_name":"助成情報","attribute_value_mlt":[{"subitem_award_numbers":{"subitem_award_number":"08405005","subitem_award_uri":"https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-08405005"},"subitem_award_titles":[{"subitem_award_title":"ラジカル制御を用いた表面反応過程及び薄膜形成に関する研究","subitem_award_title_language":"ja"}],"subitem_funder_identifiers":{"subitem_funder_identifier":"https://doi.org/10.13039/501100001691","subitem_funder_identifier_type":"Crossref Funder"},"subitem_funder_names":[{"subitem_funder_name":"日本学術振興会","subitem_funder_name_language":"ja"}]}]},"item_19_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-03","bibliographicIssueDateType":"Issued"}}]},"item_19_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"本研究では、まず水素とシランを原料ガスとするECRプラズマ中の気相の情報と形成された多結晶(微結晶)シリコン薄膜の膜質を系統的に調べた。その結果、特にイオンのフラックスの減少が結晶性の向上に寄与していることが判明した。この知見を基に、絶縁基板上においても中性ラジカルのみで薄膜を形成できるように磁石を用いイオンを除去する方法を開発した。本方法を用いることで、絶縁基板上でも結晶性は飛躍的に向上し、150℃の低温においても非常に平坦な表面(表面あらさ数nm)を持つ多結晶シリコンの形成に成功した。しかしながら、成長速度が1/10程度に減少したため、この問題を解決することを目的に成長初期だけ磁石を用いイオンを除去し、その後磁石を取り除きイオンがある通常のプラズマ条件で堆積する2段階成長法を試みた。その結果、膜形成速度を大きく損なわずに、イオンを首尾一貫除去して成膜する方法と同様に高い結晶性、表面の平坦性を持つ膜を形成に成功した。また、イオンは特に結晶核の形成を妨げていることも判明した。次に、ダイヤモンドプロセスにおいてもC原子密度をモニタする真空紫外吸収分光法と発光分光法を用い、C原子密度と他のラジカル密度との振る舞いと膜質の相関からラジカルの役割を解明した。その結果、低圧プラズマでは、カ-ボン原子は非ダイヤモンド成分の形成に寄与し、OHラジカルがダイヤモンド表面を終端しているH原子を効果的に引き抜きダイヤモンド層の成長を促進していることが判明した。以上、3年間の本研究をとおして、多結晶シリコンとダイヤモンド薄膜形成プロセスにおいてラジカルの役割を解明することで重要な知見を得ることに成功した。さらに、これらの知見を基にラジカルを制御することで薄膜のさらなる高品質化が期待できる方法の構築にも成功した。","subitem_description_language":"ja","subitem_description_type":"Abstract"}]},"item_19_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"科学研究費補助金 研究種目:基盤研究(A)(2) 課題番号:08405005 研究代表者:後藤 俊夫 研究期間:1996-1998年度","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_19_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/13079"}]},"item_19_relation_40":{"attribute_name":"シリーズ","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"科学研究費補助金報告書;基盤研究(A)(2);08405005"}]}]},"item_19_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_19_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"後藤, 俊夫","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"33916","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"河野, 明廣","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"33917","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"堀, 勝","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"33918","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"伊藤, 昌文","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"33919","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"08405005.pdf","filesize":[{"value":"5.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"08405005.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/11207/files/08405005.pdf"},"version_id":"2c2d9e13-a542-48b7-b114-ddb1a1d8e5a8"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Absorption spectroscopy","subitem_subject_scheme":"Other"},{"subitem_subject":"Amorphous Silicon","subitem_subject_scheme":"Other"},{"subitem_subject":"CVD","subitem_subject_scheme":"Other"},{"subitem_subject":"Chemical vapor deposition","subitem_subject_scheme":"Other"},{"subitem_subject":"Diamond","subitem_subject_scheme":"Other"},{"subitem_subject":"FT-IR","subitem_subject_scheme":"Other"},{"subitem_subject":"FT-IRRAS","subitem_subject_scheme":"Other"},{"subitem_subject":"Plasma","subitem_subject_scheme":"Other"},{"subitem_subject":"Poly crystalline Silicon","subitem_subject_scheme":"Other"},{"subitem_subject":"Process","subitem_subject_scheme":"Other"},{"subitem_subject":"Radical","subitem_subject_scheme":"Other"},{"subitem_subject":"アモルファスシリコン","subitem_subject_scheme":"Other"},{"subitem_subject":"ダイヤモンド","subitem_subject_scheme":"Other"},{"subitem_subject":"プラズマ","subitem_subject_scheme":"Other"},{"subitem_subject":"プロセス","subitem_subject_scheme":"Other"},{"subitem_subject":"ラジカル","subitem_subject_scheme":"Other"},{"subitem_subject":"吸収分光法","subitem_subject_scheme":"Other"},{"subitem_subject":"多結晶シリコン","subitem_subject_scheme":"Other"},{"subitem_subject":"赤外半導体レ-ザ吸収分光法","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"ラジカル制御を用いた表面反応過程及び薄膜形成に関する研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ラジカル制御を用いた表面反応過程及び薄膜形成に関する研究","subitem_title_language":"ja"}]},"item_type_id":"19","owner":"1","path":["1093"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2010-04-06"},"publish_date":"2010-04-06","publish_status":"0","recid":"11207","relation_version_is_last":true,"title":["ラジカル制御を用いた表面反応過程及び薄膜形成に関する研究"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T05:09:59.772997+00:00"}