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Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts
http://hdl.handle.net/2237/13953
http://hdl.handle.net/2237/13953e86f7f7c-6824-471a-a4f6-7129e77cfee1
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2010-08-04 | |||||
タイトル | ||||||
タイトル | Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts | |||||
言語 | en | |||||
著者 |
Nakatsuka, Osamu
× Nakatsuka, Osamu× Akimoto, Shingo× Nishimura, Tsuyoshi× Zaima, Shigeaki |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | ©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | |||||
抄録 | ||||||
内容記述 | This paper investigated the influence of the interfacial structure on electrical properties of metal/n-Ge Schottky contacts. The native oxide on Ge surface is not the origin of Fermi level pinning (FLP) and the interfacial reaction between metal and Ge probably caused FLP. The introduction of Si inter layer was not effective to resolve the FLP of metal/Ge contacts. It is important to investigate the reaction and the crystalline structure at metal/Ge interfaces with atomic scale in detail to understand the FLP in the future. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | IEEE | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1109/IWJT.2009.5166215 | |||||
ISBN | ||||||
関連タイプ | isPartOf | |||||
識別子タイプ | ISBN | |||||
関連識別子 | 978-1-4244-3319-3 | |||||
書誌情報 |
en : International Workshop on Junction Technology (IWJT 2009) p. 40-41, 発行日 2009-05-11 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/13953 | |||||
識別子タイプ | HDL | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.1109/IWJT.2009.5166215 | |||||
識別子タイプ | DOI |