{"_buckets": {"deposit": "4990ad06-0851-4f13-801a-59ace07f6426"}, "_deposit": {"id": "12075", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "12075"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00012075"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2009-05-11", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "41", "bibliographicPageStart": "40", "bibliographic_titles": [{"bibliographic_title": "International Workshop on Junction Technology (IWJT 2009)"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "This paper investigated the influence of the interfacial structure on electrical properties of metal/n-Ge Schottky contacts. The native oxide on Ge surface is not the origin of Fermi level pinning (FLP) and the interfacial reaction between metal and Ge probably caused FLP. The introduction of Si inter layer was not effective to resolve the FLP of metal/Ge contacts. It is important to investigate the reaction and the crystalline structure at metal/Ge interfaces with atomic scale in detail to understand the FLP in the future.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/13953"}, {"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.1109/IWJT.2009.5166215"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IEEE"}]}, "item_10_relation_8": {"attribute_name": "ISBN", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "978-1-4244-3319-3", "subitem_relation_type_select": "ISBN"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a92009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nakatsuka, Osamu"}], "nameIdentifiers": [{"nameIdentifier": "38311", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Akimoto, Shingo"}], "nameIdentifiers": [{"nameIdentifier": "38312", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nishimura, Tsuyoshi"}], "nameIdentifiers": [{"nameIdentifier": "38313", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Zaima, Shigeaki"}], "nameIdentifiers": [{"nameIdentifier": "38314", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "nakatsuka.pdf", "filesize": [{"value": "384.7 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 384700.0, "url": {"label": "nakatsuka.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/12075/files/nakatsuka.pdf"}, "version_id": "41d6d048-54bf-4023-92b4-a6d7a00fc244"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/13953", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2010-08-04"}, "publish_date": "2010-08-04", "publish_status": "0", "recid": "12075", "relation": {}, "relation_version_is_last": true, "title": ["Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts"], "weko_shared_id": null}