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Field-modulated thermopower in SrTiO3-based field-effect transistors with amorphous 12CaO・7Al2O3 glass gate insulator
http://hdl.handle.net/2237/14153
http://hdl.handle.net/2237/14153c819e568-da27-44d7-ba71-d57d55786c90
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2010-09-16 | |||||
タイトル | ||||||
タイトル | Field-modulated thermopower in SrTiO3-based field-effect transistors with amorphous 12CaO・7Al2O3 glass gate insulator | |||||
言語 | en | |||||
著者 |
Ohta, Hiromichi
× Ohta, Hiromichi× Masuoka, Yumi× Asahi, Ryoji× Kato, Takeharu× Ikuhara, Yuichi× Nomura, Kenji× Hosono, Hideo |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | We report transistor characteristics and field-modulated thermopower (S) for single crystal SrTiO3-based field-effect transistors (FETs). We use 150-nm-thick amorphous 12CaO⋅7Al2O3 glass as the gate insulator of the SrTiO3-FET. The resulting SrTiO3-FET exhibits excellent transistor characteristics at room temperature: on-to-off current ratio greater than 10^6, threshold gate voltage of +1.1 V, subthreshold swing of approximately 0.3 V decade^−1, and effective mobility of 2 cm^2 V^−1 s^−1. The field-modulated S-value of the SrTiO3-FET varied from −900 to −580 μV K^−1 with electric fields of up to 2 MV cm^−1, demonstrating the effectiveness of the FET structure for the exploration of thermoelectric materials. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.3231873 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 95, 号 11, p. 113505-113505, 発行日 2009-09 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/14153 | |||||
識別子タイプ | HDL | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.1063/1.3231873 | |||||
識別子タイプ | DOI |