@article{oai:nagoya.repo.nii.ac.jp:00012276,
 author = {Gao, Xingyu and Chen, Shi and Liu, Tao and Chen, Wei and Wee, A. T. S. and Nomoto, T. and Yagi, S. and Soda, Kazuo and Yuhara, Junji},
 issue = {14},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Oct},
 note = {The evolution of silicon carbide (0001) surface reconstruction upon annealing has been studied by Si K edge extended x-ray absorption fine structure (EXAFS). Using Si KVV Auger electron yield at different emission angles with different surface sensitivities, EXAFS reveals conclusively that Si–Si bonds exist on the surface for all reconstructions. The existence of Si clusters on the 6 square root of 3 × 6 square root of 3R30° surface was also confirmed by x-ray photoemission spectroscopy. This finding gives us a better understanding of epitaxial graphene formation on SiC.},
 pages = {144102--144102},
 title = {Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure},
 volume = {95},
 year = {2009}
}