{"created":"2021-03-01T06:19:13.368924+00:00","id":12276,"links":{},"metadata":{"_buckets":{"deposit":"78c0ae74-40fd-4ac2-ac6d-a82a06f85b3b"},"_deposit":{"id":"12276","owners":[],"pid":{"revision_id":0,"type":"depid","value":"12276"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00012276","sets":["320:321:322"]},"author_link":["38756","38757","38758","38759","38760","38761","38762","38763","38764"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"14","bibliographicPageEnd":"144102","bibliographicPageStart":"144102","bibliographicVolumeNumber":"95","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The evolution of silicon carbide (0001) surface reconstruction upon annealing has been studied by Si K edge extended x-ray absorption fine structure (EXAFS). Using Si KVV Auger electron yield at different emission angles with different surface sensitivities, EXAFS reveals conclusively that Si–Si bonds exist on the surface for all reconstructions. The existence of Si clusters on the 6 square root of 3 × 6 square root of 3R30° surface was also confirmed by x-ray photoemission spectroscopy. This finding gives us a better understanding of epitaxial graphene formation on SiC.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/14156"},{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.1063/1.3242005"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.3242005","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Gao, Xingyu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"38756","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Chen, Shi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"38757","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Liu, Tao","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"38758","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Chen, Wei","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"38759","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wee, A. 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