@article{oai:nagoya.repo.nii.ac.jp:00012300,
 author = {Kondo, Hiroki and Sakurai, Shinnya and Sakashita, Mitsuo and Sakai, Akira and Ogawa, Masaki and Zaima, Shigeaki},
 issue = {1},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Jan},
 note = {Praseodymium (Pr) oxide films were grown by metal-organic chemical-vapor-deposition (CVD) using Pr(EtCp)3. Using H2O as an oxidant, Pr2O3 films with columnar structures are formed and its C concentration can be reduced to about one-tenth compared with the case using O2. Activation energy of 0.37 eV is derived for this CVD using H2O. This CVD-Pr oxide film deposited at 300 °C has a dielectric constant of 26±3. Furthermore, conduction band offset of 1.0±0.1 eV and trap levels of 0.40±0.02 and 0.22±0.02 eV in the CVD-Pr2O3/Si structure were also determined by current conduction characteristics.},
 pages = {012105--012105},
 title = {Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor},
 volume = {96},
 year = {2010}
}