{"created":"2021-03-01T06:19:14.931742+00:00","id":12300,"links":{},"metadata":{"_buckets":{"deposit":"9ffb904f-3be9-4ad5-926e-78e1e3df79ea"},"_deposit":{"id":"12300","owners":[],"pid":{"revision_id":0,"type":"depid","value":"12300"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00012300","sets":["320:321:322"]},"author_link":["38894","38895","38896","38897","38898","38899"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-01-04","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"012105","bibliographicPageStart":"012105","bibliographicVolumeNumber":"96","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Praseodymium (Pr) oxide films were grown by metal-organic chemical-vapor-deposition (CVD) using Pr(EtCp)3. Using H2O as an oxidant, Pr2O3 films with columnar structures are formed and its C concentration can be reduced to about one-tenth compared with the case using O2. Activation energy of 0.37 eV is derived for this CVD using H2O. This CVD-Pr oxide film deposited at 300 °C has a dielectric constant of 26±3. Furthermore, conduction band offset of 1.0±0.1 eV and trap levels of 0.40±0.02 and 0.22±0.02 eV in the CVD-Pr2O3/Si structure were also determined by current conduction characteristics.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/14181"},{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.1063/1.3275706"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.3275706","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kondo, Hiroki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"38894","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakurai, Shinnya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"38895","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakashita, Mitsuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"38896","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakai, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"38897","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ogawa, Masaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"38898","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zaima, Shigeaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"38899","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"applied_physics_letters_96_1_012105.pdf","filesize":[{"value":"399.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"applied_physics_letters_96_1_012105.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/12300/files/applied_physics_letters_96_1_012105.pdf"},"version_id":"bb052ae7-bf62-45ce-a30e-1abad0529e1d"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2010-09-22"},"publish_date":"2010-09-22","publish_status":"0","recid":"12300","relation_version_is_last":true,"title":["Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:59:08.922244+00:00"}