@article{oai:nagoya.repo.nii.ac.jp:00012317,
 author = {Kawaguchi, T. and Uemura, H. and Ohno, T. and Tabuchi, M. and Ujihara, T. and Takenaka, K. and Takeda, Y. and Ikuta, H.},
 issue = {4},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Jul},
 note = {Superconducting NdFeAs(O,F) thin films were grown on GaAs substrates by molecular beam epitaxy. Films grown with a sufficiently long growth time exhibited a clear superconducting transition with an onset temperature up to 48 K and zero resistance temperature up to 42 K without the need of an ex situ annealing process. Electron probe microanalysis and Hall coefficient measurements indicated that the superconducting films are doped with fluorine, and depth-profile analysis by Auger electron spectroscopy revealed the formation of a NdOF layer near the surface, which is probably connected with the fluorine doping.},
 pages = {042509--042509},
 title = {In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy},
 volume = {97},
 year = {2010}
}