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Si およびGe半導体表面のスパッタリングにおける2次イオンの生成過程
http://hdl.handle.net/2237/14875
ce8c9365-0729-4118-9597-cb8d51d726ca
名前 / ファイル | ライセンス | アクション | |
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
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公開日 | 2011-05-24 | |||||
タイトル | ||||||
タイトル | Si およびGe半導体表面のスパッタリングにおける2次イオンの生成過程 | |||||
その他のタイトル | ||||||
その他のタイトル | Formation processes of secondary ions sputtered from Si and Ge semiconductor surfaces | |||||
著者 |
佐久間, 靖博
× 佐久間, 靖博 |
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内容記述 | ||||||
内容記述 | 名古屋大学博士学位論文 学位の種類 : 博士(工学)(課程) 学位授与年月日:平成23年3月25日 | |||||
内容記述タイプ | Other | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
書誌情報 | 発行日 2011-03-25 | |||||
学位授与年度 | ||||||
学位授与年度 | 2010 | |||||
学位授与年月日 | ||||||
学位授与年月日 | 2011-03-25 | |||||
学位授与番号 | ||||||
学位授与番号 | 13901甲第9242号 | |||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/14875 | |||||
識別子タイプ | HDL |