{"created":"2021-03-01T06:25:28.449702+00:00","id":18090,"links":{},"metadata":{"_buckets":{"deposit":"ebac96a6-5129-41ee-99d4-0095b182ac4b"},"_deposit":{"id":"18090","owners":[],"pid":{"revision_id":0,"type":"depid","value":"18090"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00018090","sets":["320:606:607"]},"author_link":["52674"],"item_12_alternative_title_19":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Study on high performance nitride-based high breakdown voltage field effect transistor","subitem_alternative_title_language":"en"}]},"item_12_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-03-25","bibliographicIssueDateType":"Issued"}}]},"item_12_date_granted_64":{"attribute_name":"学位授与年月日","attribute_value_mlt":[{"subitem_dategranted":"2014-03-25"}]},"item_12_degree_grantor_62":{"attribute_name":"学位授与機関","attribute_value_mlt":[{"subitem_degreegrantor":[{"subitem_degreegrantor_language":"ja","subitem_degreegrantor_name":"名古屋大学"},{"subitem_degreegrantor_language":"en","subitem_degreegrantor_name":"Nagoya University"}],"subitem_degreegrantor_identifier":[{"subitem_degreegrantor_identifier_name":"13901","subitem_degreegrantor_identifier_scheme":"kakenhi"}]}]},"item_12_degree_name_61":{"attribute_name":"学位名","attribute_value_mlt":[{"subitem_degreename":"博士(工学)","subitem_degreename_language":"ja"}]},"item_12_dissertation_number_65":{"attribute_name":"学位授与番号","attribute_value_mlt":[{"subitem_dissertationnumber":"甲第10634号"}]},"item_12_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/20314"}]},"item_12_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"ETD"}]},"item_12_text_63":{"attribute_name":"学位授与年度","attribute_value_mlt":[{"subitem_text_value":"2013"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"杉山, 貴之","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"52674","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"k10634_abstract.pdf","filesize":[{"value":"226.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"k10634_abstract.pdf ","objectType":"abstract","url":"https://nagoya.repo.nii.ac.jp/record/18090/files/k10634_abstract.pdf"},"version_id":"922155e3-809c-4fcf-ae74-7955481c2ba3"},{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"k10634_thesis.pdf","filesize":[{"value":"3.7 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"k10634_thesis.pdf ","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/18090/files/k10634_thesis.pdf"},"version_id":"43d34c99-47ed-4ec6-9882-39cab7b0e251"},{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-21"}],"displaytype":"detail","filename":"k10634_review.pdf","filesize":[{"value":"79.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"k10634_review.pdf ","objectType":"other","url":"https://nagoya.repo.nii.ac.jp/record/18090/files/k10634_review.pdf"},"version_id":"fb93ddd4-6a12-4664-846d-2adfe35cbd00"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"doctoral thesis","resourceuri":"http://purl.org/coar/resource_type/c_db06"}]},"item_title":"窒化物半導体を用いた高耐圧電界効果トランジスタの高性能化に関する研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"窒化物半導体を用いた高耐圧電界効果トランジスタの高性能化に関する研究","subitem_title_language":"ja"}]},"item_type_id":"12","owner":"1","path":["607"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2014-06-16"},"publish_date":"2014-06-16","publish_status":"0","recid":"18090","relation_version_is_last":true,"title":["窒化物半導体を用いた高耐圧電界効果トランジスタの高性能化に関する研究"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:06:29.038959+00:00"}