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Clustering of germanium atoms in silica glass responsible for the 3.1 eV emission band studied by optical absorption and X-ray absorption fine structure analysis
http://hdl.handle.net/2237/20786
http://hdl.handle.net/2237/2078659075a00-2ad3-4972-8584-9cc0658389f9
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2014-11-17 | |||||
タイトル | ||||||
タイトル | Clustering of germanium atoms in silica glass responsible for the 3.1 eV emission band studied by optical absorption and X-ray absorption fine structure analysis | |||||
言語 | en | |||||
著者 |
Yoshida, Tomoko
× Yoshida, Tomoko× Muto, Shunsuke× Yuliati, Leny× Yoshida, Hisao× Inada, Yasuhiro |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | This is the author's version of a work that was accepted for publication in Journal of Nuclear Materials. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms, may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Nuclear Materials. v.386–388, 2009, p.1010–1013, DOI:10.1016/j.jnucmat.2008.12.201. | |||||
抄録 | ||||||
内容記述 | Correlation between the 3.1 eV emission band and local atomic configuration was systematically examined for Ge+ implanted silica glass by UV–vis optical absorption spectroscopy and X-ray absorption fine structure (XAFS) analysis. The 2.7 eV emission band, commonly observed in defective silica, was replaced by the sharp and intense 3.1 eV emission band for the Ge+ fluence > 2 × 1016 cm−2, in which UV–vis absorption spectra suggested clustering of Ge atoms with the size ∼1 nm. XAFS spectroscopy indicated that the Ge atoms were under coordinated with oxygen atoms nearly at a neutral valence state on average. The present results are consistent with the previous ESR study but imply that the small Ge clusters rather than the O=Ge: complexes (point defects) are responsible for the 3.1 eV emission band. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Elsevier | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.jnucmat.2008.12.201 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0022-3115 | |||||
書誌情報 |
en : Journal of Nuclear Materials 巻 386–388, p. 1010-1013, 発行日 2009-04 |
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著者版フラグ | ||||||
値 | author | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.1016/j.jnucmat.2008.12.201 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/20786 | |||||
識別子タイプ | HDL |