@article{oai:nagoya.repo.nii.ac.jp:02001364,
 author = {Kumabe, Takeru and Ando, Yuto and Watanabe, Hirotaka and Deki, Manato and Tanaka, Atsushi and Nitta, Shugo and Honda, Yoshio and Amano, Hiroshi},
 issue = {SB},
 journal = {Japanese Journal of Applied Physics},
 month = {May},
 note = {Inductively coupled plasma–reactive ion etching (ICP–RIE)-induced damage in heavily Mg-doped p-type GaN ([Mg] = 2 × 10^19 cm^−3) was investigated by low-temperature photoluminescence (PL) and depth-resolved cathodoluminescence (CL) spectroscopy. From PL measurements, we found broad yellow luminescence (YL) with a maximum at around 2.2–2.3 eV, whose origin was considered to be isolated nitrogen vacancies (VN), only in etched samples. The depth-resolved CL spectroscopy revealed that the etching-induced YL was distributed up to the electron-beam penetration depth of around 200 nm at a high ICP–RIE bias power (Pbias). Low-bias-power (low-Pbias) ICP–RIE suppressed the YL and its depth distribution to levels similar to those of an unetched sample, and a current–voltage characteristic comparable to that of an unetched sample was obtained for a sample etched with Pbias of 2.5 W.},
 title = {Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching},
 volume = {60},
 year = {2021}
}