@article{oai:nagoya.repo.nii.ac.jp:02001901,
 author = {Nagata, Kengo and Makino, Hiroaki and Miwa, Hiroshi and Matsui, Shinichi and Boyama, Shinya and Saito, Yoshiki and Kushimoto, Maki and Honda, Yoshio and Takeuchi, Tetsuya and Amano, Hiroshi},
 issue = {8},
 journal = {Applied Physics Express},
 month = {Aug},
 note = {We reduced the operating voltage of AlGaN homojunction tunnel junction (TJ) deep-ultraviolet (UV) light-emitting diodes (LEDs) by two approaches: the suppression of carbon incorporation and the doping of a high concentration of silicon in an n^+-AlGaN layer. The AlGaN homojunction TJ deep-UV LEDs had a significantly reduced forward voltage upon suppressing the incorporation of carbon in the n^+-AlGaN layer. The suppression of electron compensation by carbon in nitrogen sites and the doping of a high concentration of silicon in an n^+-AlGaN layer are important for reducing the operating voltage of AlGaN homojunction TJ deep-UV LEDs.},
 title = {Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations},
 volume = {14},
 year = {2021}
}