{"created":"2022-01-11T06:28:07.701478+00:00","id":2001901,"links":{},"metadata":{"_buckets":{"deposit":"2c3a1e8b-235d-40fc-ae3e-66648c7ee242"},"_deposit":{"created_by":17,"id":"2001901","owner":"17","owners":[17],"owners_ext":{"displayname":"図書情報係","username":"repository"},"pid":{"revision_id":0,"type":"depid","value":"2001901"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:02001901","sets":["673:674:675"]},"author_link":[],"control_number":"2001901","item_1615768549627":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_1629683748249":{"attribute_name":"日付","attribute_value_mlt":[{"subitem_date_issued_datetime":"2022-08-01","subitem_date_issued_type":"Available"}]},"item_9_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageStart":"084001","bibliographicVolumeNumber":"14","bibliographic_titles":[{"bibliographic_title":"Applied Physics Express","bibliographic_titleLang":"en"}]}]},"item_9_description_4":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We reduced the operating voltage of AlGaN homojunction tunnel junction (TJ) deep-ultraviolet (UV) light-emitting diodes (LEDs) by two approaches: the suppression of carbon incorporation and the doping of a high concentration of silicon in an n^+-AlGaN layer. The AlGaN homojunction TJ deep-UV LEDs had a significantly reduced forward voltage upon suppressing the incorporation of carbon in the n^+-AlGaN layer. The suppression of electron compensation by carbon in nitrogen sites and the doping of a high concentration of silicon in an n^+-AlGaN layer are important for reducing the operating voltage of AlGaN homojunction TJ deep-UV LEDs.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_9_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP publishing","subitem_publisher_language":"en"}]},"item_9_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.35848/1882-0786/ac0fb6","subitem_relation_type_select":"DOI"}}]},"item_9_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is the Accepted Manuscript version of an article accepted for publication in [Applied Physics Express]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1882-0786/ac0fb6].","subitem_rights_language":"en"},{"subitem_rights":"“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”","subitem_rights_language":"en"}]},"item_9_source_id_7":{"attribute_name":"収録物識別子","attribute_value_mlt":[{"subitem_source_identifier":"1882-0778","subitem_source_identifier_type":"PISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nagata, Kengo","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Makino, Hiroaki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Miwa, Hiroshi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Matsui, Shinichi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Boyama, Shinya","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Saito, Yoshiki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Kushimoto, Maki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Takeuchi, Tetsuya","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Amano, Hiroshi","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-08-01"}],"displaytype":"detail","filename":"AlGaN_AlGaN_tunnel_junnction_nagata_submitted.pdf","filesize":[{"value":"756 KB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/2001901/files/AlGaN_AlGaN_tunnel_junnction_nagata_submitted.pdf"},"version_id":"5ccfc152-7857-4771-ab18-ecb830092de2"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations","subitem_title_language":"en"}]},"item_type_id":"40001","owner":"17","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-01-11"},"publish_date":"2022-01-11","publish_status":"0","recid":"2001901","relation_version_is_last":true,"title":["Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations"],"weko_creator_id":"17","weko_shared_id":-1},"updated":"2023-01-16T04:40:39.717824+00:00"}