@article{oai:nagoya.repo.nii.ac.jp:02002040,
 author = {Kondo, Shinya and Shimura, Reijiro and Teranishi, Takashi and Kishimoto, Akira and Nagasaki, Takanori and Funakubo, Hiroshi and Yamada, Tomoaki},
 issue = {SF},
 journal = {Japanese Journal of Applied Physics},
 month = {Nov},
 note = {Recently, we reported linear electro-optic (EO) effects in (100)-epitaxial yttrium-doped hafnium dioxide (Y-HfO2) ferroelectric thin films. In this study, we have investigated the influence of orientation on the EO effect in Y-HfO2 thin-film. (111)-epitaxial undoped HfO2 and Y-HfO2 films were deposited on Sn-doped In2O3/yttria-stabilized zirconia (111) substrates at room temperature through radiofrequency magnetron sputtering. Although the undoped HfO2 film showed typical paraelectric characteristics, ferroelectricity was observed in the (111)-Y-HfO2 film. Remnant polarization in the (111)-Y-HfO2 film was higher than that in the (100)-Y-HfO2 film. The (111)-Y-HfO2 film exhibited a linear EO effect based on ferroelectricity, which is consistent with that of the (100)-Y-HfO2 film. The average EO coefficient rc of the (111)-Y-HfO2 film was 0.67 pm V^−1, which is higher than that of the (100)-Y-HfO2 film. This result is reasonable considering the difference in remnant polarization between the (100)-Y-HfO2 and (111)-Y-HfO2 films.},
 title = {Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin films},
 volume = {60},
 year = {2021}
}