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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Fabrication of heterojunction crystalline Si solar cells with BaSi2 thin films prepared by a two-step evaporation method

http://hdl.handle.net/2237/0002002067
c1441ece-8af9-4e9f-9013-3991f66cd169
名前 / ファイル ライセンス アクション
Manuscript_rev2_final-v3-NU-repo.pdf Manuscript_rev2_final-v3-NU-repo.pdf (799 KB)
 Download is available from 2022/9/30.
Item type itemtype_ver1(1)
公開日 2022-02-10
タイトル
タイトル Fabrication of heterojunction crystalline Si solar cells with BaSi2 thin films prepared by a two-step evaporation method
言語 en
著者 Nakagawa, Yoshihiko

× Nakagawa, Yoshihiko

en Nakagawa, Yoshihiko

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Takahashi, Kazuma

× Takahashi, Kazuma

en Takahashi, Kazuma

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Fujiwara, Michinobu

× Fujiwara, Michinobu

en Fujiwara, Michinobu

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Hara, Kosuke O.

× Hara, Kosuke O.

en Hara, Kosuke O.

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Gotoh, Kazuhiro

× Gotoh, Kazuhiro

en Gotoh, Kazuhiro

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Kurokawa, Yasuyoshi

× Kurokawa, Yasuyoshi

en Kurokawa, Yasuyoshi

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Itoh, Takashi

× Itoh, Takashi

en Itoh, Takashi

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Suemasu, Takashi

× Suemasu, Takashi

en Suemasu, Takashi

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Usami, Noritaka

× Usami, Noritaka

en Usami, Noritaka

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アクセス権
アクセス権 embargoed access
アクセス権URI http://purl.org/coar/access_right/c_f1cf
権利
言語 en
権利情報 This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1347-4065/ac23ec]
権利
言語 en
権利情報 “This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
内容記述
内容記述 We have fabricated p-type BaSi2 (p-BaSi2)/n-type crystalline Si (n-c-Si) heterojunction solar cells using thermal evaporation. To control the defect around the heterointerface, samples were fabricated by two methods using different current profiles during evaporation. The one-step method was designed to avoid supplying Ba-rich vapor, and the two-step method was designed to intentionally introduce Ba-rich vapor at the first step. Deep-level transient spectroscopy measurements revealed that defect densities in the n-c-Si side were almost the same for both samples. Open-circuit voltage (Voc) was successfully improved from 319 to 463 mV by the two-step method. This may be due to the increase of carrier density in p-BaSi2 prepared using a two-step method. As a result of optimization, the conversion efficiency of 6.23% was achieved by the heterojunction solar cells.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.35848/1347-4065/ac23ec
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0021-4922
書誌情報 en : Japanese Journal of Applied Physics

巻 60, 号 10, p. 105503, 発行日 2021-10
ファイル公開日
日付 2022-10-01
日付タイプ Available
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