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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Improved Performance of Titanium Oxide/Silicon Oxide Electron‐Selective Contacts by Implementation of Magnesium Interlayers

http://hdl.handle.net/2237/0002002072
http://hdl.handle.net/2237/0002002072
cdc20d33-96d0-4719-9d4e-90c0cbb4a4cd
名前 / ファイル ライセンス アクション
Manuscript_pssa-202100296_revised.pdf Manuscript_pssa-202100296_revised.pdf (1.1 MB)
Item type itemtype_ver1(1)
公開日 2022-02-10
タイトル
タイトル Improved Performance of Titanium Oxide/Silicon Oxide Electron‐Selective Contacts by Implementation of Magnesium Interlayers
言語 en
著者 Nakagawa, Yuta

× Nakagawa, Yuta

en Nakagawa, Yuta

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Gotoh, Kazuhiro

× Gotoh, Kazuhiro

en Gotoh, Kazuhiro

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Inoue, Tetsuya

× Inoue, Tetsuya

en Inoue, Tetsuya

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Kurokawa, Yasuyoshi

× Kurokawa, Yasuyoshi

en Kurokawa, Yasuyoshi

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Usami, Noritaka

× Usami, Noritaka

en Usami, Noritaka

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 "This is the peer reviewed version of the following article: [Nakagawa, Y., Gotoh, K., Inoue, T., Kurokawa, Y. and Usami, N. (2021), Improved Performance of Titanium Oxide/Silicon Oxide Electron-Selective Contacts by Implementation of Magnesium Interlayers. Phys. Status Solidi A, 218: 2100296. https://doi.org/10.1002/pssa.202100296], which has been published in final form at [https://doi.org/10.1002/pssa.202100296]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited."
内容記述
内容記述 The impact of the implementation of magnesium interlayer and the layer thickness (tTiOx) of titanium oxide on the electrical properties of TiOx/SiOy/Si heterojunctions is investigated to improve electron transport for use in silicon heterojunction solar cells. The passivation performance is improved with increasing tTiOx. For the samples with Mg interlayer, ohmic contact can be attained for the thicker TiOx layer compared with the sample without Mg interlayer. Schottky contact is mitigated by the TiOx/SiOy stacking layers and Mg interlayer, attributed to the reduction of interfacial energy level by TiOx/SiOy stacking layers and enhanced downward band bending by Mg interlayer. The open-circuit voltage and fill factor of the solar cells are improved by inserting the TiOx/SiOy stack and the Mg interlayer, indicating that the electron selectivity is enhanced. Excellent surface passivation and transport properties can be achieved by controlling TiOx layer thickness and using the Mg interlayer.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 Wiley
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1002/pssa.202100296
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 1862-6300
書誌情報 en : physica status solidi (a)

巻 218, 号 19, p. 2100296, 発行日 2021-10
ファイル公開日
日付 2022-10-01
日付タイプ Available
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