{"created":"2022-02-10T04:34:09.991234+00:00","id":2002072,"links":{},"metadata":{"_buckets":{"deposit":"d0aa3fdd-a591-4a84-a418-80161d948ff8"},"_deposit":{"created_by":17,"id":"2002072","owner":"17","owners":[17],"owners_ext":{"displayname":"図書情報係","username":"repository"},"pid":{"revision_id":0,"type":"depid","value":"2002072"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:02002072","sets":["320:321:322"]},"author_link":[],"control_number":"2002072","item_1615768549627":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_1629683748249":{"attribute_name":"日付","attribute_value_mlt":[{"subitem_date_issued_datetime":"2022-10-01","subitem_date_issued_type":"Available"}]},"item_9_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"19","bibliographicPageStart":"2100296","bibliographicVolumeNumber":"218","bibliographic_titles":[{"bibliographic_title":"physica status solidi (a)","bibliographic_titleLang":"en"}]}]},"item_9_description_4":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The impact of the implementation of magnesium interlayer and the layer thickness (tTiOx) of titanium oxide on the electrical properties of TiOx/SiOy/Si heterojunctions is investigated to improve electron transport for use in silicon heterojunction solar cells. The passivation performance is improved with increasing tTiOx. For the samples with Mg interlayer, ohmic contact can be attained for the thicker TiOx layer compared with the sample without Mg interlayer. Schottky contact is mitigated by the TiOx/SiOy stacking layers and Mg interlayer, attributed to the reduction of interfacial energy level by TiOx/SiOy stacking layers and enhanced downward band bending by Mg interlayer. The open-circuit voltage and fill factor of the solar cells are improved by inserting the TiOx/SiOy stack and the Mg interlayer, indicating that the electron selectivity is enhanced. Excellent surface passivation and transport properties can be achieved by controlling TiOx layer thickness and using the Mg interlayer.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_9_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Wiley","subitem_publisher_language":"en"}]},"item_9_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1002/pssa.202100296","subitem_relation_type_select":"DOI"}}]},"item_9_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"\"This is the peer reviewed version of the following article: [Nakagawa, Y., Gotoh, K., Inoue, T., Kurokawa, Y. and Usami, N. (2021), Improved Performance of Titanium Oxide/Silicon Oxide Electron-Selective Contacts by Implementation of Magnesium Interlayers. Phys. Status Solidi A, 218: 2100296. https://doi.org/10.1002/pssa.202100296], which has been published in final form at [https://doi.org/10.1002/pssa.202100296]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.\"","subitem_rights_language":"en"}]},"item_9_source_id_7":{"attribute_name":"収録物識別子","attribute_value_mlt":[{"subitem_source_identifier":"1862-6300","subitem_source_identifier_type":"PISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakagawa, Yuta","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Gotoh, Kazuhiro","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Inoue, Tetsuya","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Kurokawa, Yasuyoshi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Usami, Noritaka","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-10-01"}],"displaytype":"detail","filename":"Manuscript_pssa-202100296_revised.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/2002072/files/Manuscript_pssa-202100296_revised.pdf"},"version_id":"618c6992-1a3a-4884-9803-cf1d20cb0be0"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Improved Performance of Titanium Oxide/Silicon Oxide Electron‐Selective Contacts by Implementation of Magnesium Interlayers","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Improved Performance of Titanium Oxide/Silicon Oxide Electron‐Selective Contacts by Implementation of Magnesium Interlayers","subitem_title_language":"en"}]},"item_type_id":"40001","owner":"17","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-02-10"},"publish_date":"2022-02-10","publish_status":"0","recid":"2002072","relation_version_is_last":true,"title":["Improved Performance of Titanium Oxide/Silicon Oxide Electron‐Selective Contacts by Implementation of Magnesium Interlayers"],"weko_creator_id":"17","weko_shared_id":-1},"updated":"2023-01-16T05:08:31.993625+00:00"}