{"_buckets": {"deposit": "132443a3-3d9b-4a8b-bec9-139e0e088f82"}, "_deposit": {"created_by": 17, "id": "2002073", "owner": "17", "owners": [17], "owners_ext": {"displayname": "図書情報係", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2002073"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02002073", "sets": ["322"]}, "author_link": [], "control_number": "2002073", "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_1629683748249": {"attribute_name": "日付", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2023-11-30", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2021-11-30", "bibliographicIssueDateType": "Issued"}, "bibliographicPageStart": "150799", "bibliographicVolumeNumber": "567", "bibliographic_titles": [{"bibliographic_title": "Applied Surface Science", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "We studied the impact of oxidizing pre-treatments (OPT) and post deposition annealing (PDA) on the passivation performance and the hydrogen distribution near the interface between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H), the critical functional region in Si heterojunction solar cells. The OPT prior to deposition of the a-Si:H layer consists of immersing the c-Si substrates into hydrogen peroxide solutions, which forms a silicon oxide interlayer. Spectroscopic ellipsometry (SE) indicates that slightly thicker a-Si:H layers result from OPT. The refractive index and the extinction coefficient are increased by inserting the oxide interlayers, suggesting that less deficient and denser a-Si:H layers can be formed. Under optimum conditions, OPT leads to at least 2-fold improvement of the effective photo-generated carrier lifetime. PDA at 200 °C further improves the passivation performance of samples with an interlayer. Hydrogen profiling with nuclear reaction analysis clarifies that higher hydrogen concentrations are present around the heterointerfaces of samples with an interlayer and that these hydrogen concentrations are maintained after PDA. Our results suggest that the oxide interlayer can suppress hydrogen desorption in the initial growth stage of high-quality a-Si:H layers and during subsequent PDA, resulting in excellent passivation performance.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Elsevier", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.apsusc.2021.150799", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2021. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "0169-4332", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "embargoed access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_f1cf"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Gotoh, Kazuhiro", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Wilde, Markus", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ogura, Shohei", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Kurokawa, Yasuyoshi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Fukutani, Katsuyuki", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Usami, Noritaka", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2023-11-30"}], "displaytype": "detail", "download_preview_message": "Download / Preview is available from 2023/11/29.", "file_order": 0, "filename": "Manuscript_APSUSC-567-150799_revised.pdf", "filesize": [{"value": "1.8 MB"}], "format": "application/pdf", "future_date_message": "Download is available from 2023/11/29.", "is_thumbnail": false, "mimetype": "application/pdf", "size": 1800000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2002073/files/Manuscript_APSUSC-567-150799_revised.pdf"}, "version_id": "ed2b6a6b-2f8a-42ba-baf7-bb01220ba828"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Oxidizing pre-treatment", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Passivation", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Hydrogen distribution", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Hydrogenated amorphous silicon", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Crystalline silicon", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/0002002073", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2022-02-10"}, "publish_date": "2022-02-10", "publish_status": "0", "recid": "2002073", "relation": {}, "relation_version_is_last": true, "title": ["Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces"], "weko_shared_id": -1}