ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "132443a3-3d9b-4a8b-bec9-139e0e088f82"}, "_deposit": {"created_by": 17, "id": "2002073", "owner": "17", "owners": [17], "owners_ext": {"displayname": "図書情報係", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2002073"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02002073", "sets": ["322"]}, "author_link": [], "control_number": "2002073", "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_1629683748249": {"attribute_name": "日付", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2023-11-30", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2021-11-30", "bibliographicIssueDateType": "Issued"}, "bibliographicPageStart": "150799", "bibliographicVolumeNumber": "567", "bibliographic_titles": [{"bibliographic_title": "Applied Surface Science", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "We studied the impact of oxidizing pre-treatments (OPT) and post deposition annealing (PDA) on the passivation performance and the hydrogen distribution near the interface between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H), the critical functional region in Si heterojunction solar cells. The OPT prior to deposition of the a-Si:H layer consists of immersing the c-Si substrates into hydrogen peroxide solutions, which forms a silicon oxide interlayer. Spectroscopic ellipsometry (SE) indicates that slightly thicker a-Si:H layers result from OPT. The refractive index and the extinction coefficient are increased by inserting the oxide interlayers, suggesting that less deficient and denser a-Si:H layers can be formed. Under optimum conditions, OPT leads to at least 2-fold improvement of the effective photo-generated carrier lifetime. PDA at 200 °C further improves the passivation performance of samples with an interlayer. Hydrogen profiling with nuclear reaction analysis clarifies that higher hydrogen concentrations are present around the heterointerfaces of samples with an interlayer and that these hydrogen concentrations are maintained after PDA. Our results suggest that the oxide interlayer can suppress hydrogen desorption in the initial growth stage of high-quality a-Si:H layers and during subsequent PDA, resulting in excellent passivation performance.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Elsevier", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.apsusc.2021.150799", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2021. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "0169-4332", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "embargoed access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_f1cf"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Gotoh, Kazuhiro", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Wilde, Markus", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ogura, Shohei", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Kurokawa, Yasuyoshi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Fukutani, Katsuyuki", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Usami, Noritaka", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2023-11-30"}], "displaytype": "detail", "download_preview_message": "Download / Preview is available from 2023/11/29.", "file_order": 0, "filename": "Manuscript_APSUSC-567-150799_revised.pdf", "filesize": [{"value": "1.8 MB"}], "format": "application/pdf", "future_date_message": "Download is available from 2023/11/29.", "is_thumbnail": false, "mimetype": "application/pdf", "size": 1800000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2002073/files/Manuscript_APSUSC-567-150799_revised.pdf"}, "version_id": "ed2b6a6b-2f8a-42ba-baf7-bb01220ba828"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Oxidizing pre-treatment", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Passivation", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Hydrogen distribution", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Hydrogenated amorphous silicon", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Crystalline silicon", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/0002002073", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2022-02-10"}, "publish_date": "2022-02-10", "publish_status": "0", "recid": "2002073", "relation": {}, "relation_version_is_last": true, "title": ["Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces"], "weko_shared_id": -1}
  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces

http://hdl.handle.net/2237/0002002073
http://hdl.handle.net/2237/0002002073
9eeda400-7df6-4a26-bfd1-c6762d9c5c42
名前 / ファイル ライセンス アクション
Manuscript_APSUSC-567-150799_revised.pdf Manuscript_APSUSC-567-150799_revised.pdf (1.8 MB)
 Download is available from 2023/11/29.
Item type itemtype_ver1(1)
公開日 2022-02-10
タイトル
タイトル Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces
言語 en
著者 Gotoh, Kazuhiro

× Gotoh, Kazuhiro

en Gotoh, Kazuhiro

Search repository
Wilde, Markus

× Wilde, Markus

en Wilde, Markus

Search repository
Ogura, Shohei

× Ogura, Shohei

en Ogura, Shohei

Search repository
Kurokawa, Yasuyoshi

× Kurokawa, Yasuyoshi

en Kurokawa, Yasuyoshi

Search repository
Fukutani, Katsuyuki

× Fukutani, Katsuyuki

en Fukutani, Katsuyuki

Search repository
Usami, Noritaka

× Usami, Noritaka

en Usami, Noritaka

Search repository
アクセス権
アクセス権 embargoed access
アクセス権URI http://purl.org/coar/access_right/c_f1cf
権利
言語 en
権利情報 © 2021. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
キーワード
主題Scheme Other
主題 Oxidizing pre-treatment
キーワード
主題Scheme Other
主題 Passivation
キーワード
主題Scheme Other
主題 Hydrogen distribution
キーワード
主題Scheme Other
主題 Hydrogenated amorphous silicon
キーワード
主題Scheme Other
主題 Crystalline silicon
内容記述
内容記述 We studied the impact of oxidizing pre-treatments (OPT) and post deposition annealing (PDA) on the passivation performance and the hydrogen distribution near the interface between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H), the critical functional region in Si heterojunction solar cells. The OPT prior to deposition of the a-Si:H layer consists of immersing the c-Si substrates into hydrogen peroxide solutions, which forms a silicon oxide interlayer. Spectroscopic ellipsometry (SE) indicates that slightly thicker a-Si:H layers result from OPT. The refractive index and the extinction coefficient are increased by inserting the oxide interlayers, suggesting that less deficient and denser a-Si:H layers can be formed. Under optimum conditions, OPT leads to at least 2-fold improvement of the effective photo-generated carrier lifetime. PDA at 200 °C further improves the passivation performance of samples with an interlayer. Hydrogen profiling with nuclear reaction analysis clarifies that higher hydrogen concentrations are present around the heterointerfaces of samples with an interlayer and that these hydrogen concentrations are maintained after PDA. Our results suggest that the oxide interlayer can suppress hydrogen desorption in the initial growth stage of high-quality a-Si:H layers and during subsequent PDA, resulting in excellent passivation performance.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 Elsevier
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.apsusc.2021.150799
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0169-4332
書誌情報 en : Applied Surface Science

巻 567, p. 150799, 発行日 2021-11-30
ファイル公開日
日付 2023-11-30
日付タイプ Available
戻る
0
views
See details
Views

Versions

Ver.1 2022-02-10 04:55:13.450631
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3