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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg

http://hdl.handle.net/2237/0002002696
http://hdl.handle.net/2237/0002002696
b0ff0572-543c-4980-a7d3-593c9d2b79e2
名前 / ファイル ライセンス アクション
5_0076764.pdf 5_0076764.pdf (5.1 MB)
Item type itemtype_ver1(1)
公開日 2022-05-10
タイトル
タイトル Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg
言語 en
著者 Lu, Shun

× Lu, Shun

en Lu, Shun

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Deki, Manato

× Deki, Manato

en Deki, Manato

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Wang, Jia

× Wang, Jia

en Wang, Jia

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Ohnishi, Kazuki

× Ohnishi, Kazuki

en Ohnishi, Kazuki

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Ando, Yuto

× Ando, Yuto

en Ando, Yuto

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Kumabe, Takeru

× Kumabe, Takeru

en Kumabe, Takeru

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Watanabe, Hirotaka

× Watanabe, Hirotaka

en Watanabe, Hirotaka

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Nitta, Shugo

× Nitta, Shugo

en Nitta, Shugo

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Honda, Yoshio

× Honda, Yoshio

en Honda, Yoshio

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Amano, Hiroshi

× Amano, Hiroshi

en Amano, Hiroshi

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright 2021 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Appl. Phys. Lett. 119, 242104 (2021)) and may be found at (https://doi.org/10.1063/5.0076764).
内容記述
内容記述 We have demonstrated a fabrication process for the Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg. An Ohmic contact with a contact resistance of 0.158 Ω cm^2 is realized on p−-GaN ([Mg] = 1.3 × 10^17 cm^−3). The contact resistance of p-type GaN with higher Mg concentration ([Mg]=1.0 × 10^19 cm^−3) can also be reduced to 2.8 × 10^−5 Ω cm^2. A localized contact layer is realized without any etching or regrowth damage. The mechanism underlying this reduced contact resistance is studied by scanning transmission electron microscopy with energy dispersive x-ray spectroscopy and secondary ion mass spectrometry, representing a mutual diffusion of Ga and Mg atoms on the interface. Reductions in the barrier height and surface depletion width with the nitrogen-annealed Mg layer are confirmed by XPS and Hall effect measurements qualitatively.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 AIP Publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/5.0076764
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 119, 号 24, p. 242104, 発行日 2021-12-13
ファイル公開日
日付 2022-12-13
日付タイプ Available
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