{"_buckets": {"deposit": "7baf7a0b-3d24-4373-a69e-abbc4c0d5256"}, "_deposit": {"created_by": 17, "id": "2002696", "owner": "17", "owners": [17], "owners_ext": {"displayname": "repository", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2002696"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02002696", "sets": ["675"]}, "author_link": [], "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_1629683748249": {"attribute_name": "日付", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2022-12-13", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2021-12-13", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "24", "bibliographicPageStart": "242104", "bibliographicVolumeNumber": "119", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "We have demonstrated a fabrication process for the Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg. An Ohmic contact with a contact resistance of 0.158 Ω cm^2 is realized on p−-GaN ([Mg] = 1.3 × 10^17 cm^−3). The contact resistance of p-type GaN with higher Mg concentration ([Mg]=1.0 × 10^19 cm^−3) can also be reduced to 2.8 × 10^−5 Ω cm^2. A localized contact layer is realized without any etching or regrowth damage. The mechanism underlying this reduced contact resistance is studied by scanning transmission electron microscopy with energy dispersive x-ray spectroscopy and secondary ion mass spectrometry, representing a mutual diffusion of Ga and Mg atoms on the interface. Reductions in the barrier height and surface depletion width with the nitrogen-annealed Mg layer are confirmed by XPS and Hall effect measurements qualitatively.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "AIP Publishing", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/5.0076764", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2021 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Appl. Phys. Lett. 119, 242104 (2021)) and may be found at (https://doi.org/10.1063/5.0076764).", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Lu, Shun", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Deki, Manato", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Wang, Jia", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ohnishi, Kazuki", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ando, Yuto", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Kumabe, Takeru", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Watanabe, Hirotaka", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2022-12-13"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "5_0076764.pdf", "filesize": [{"value": "5.1 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "application/pdf", "size": 5100000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2002696/files/5_0076764.pdf"}, "version_id": "575a4069-0371-490f-bfec-e5e3badc9ed4"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/0002002696", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2022-05-10"}, "publish_date": "2022-05-10", "publish_status": "0", "recid": "2002696", "relation": {}, "relation_version_is_last": true, "title": ["Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg"], "weko_shared_id": -1}