@article{oai:nagoya.repo.nii.ac.jp:02002696,
 author = {Lu, Shun and Deki, Manato and Wang, Jia and Ohnishi, Kazuki and Ando, Yuto and Kumabe, Takeru and Watanabe, Hirotaka and Nitta, Shugo and Honda, Yoshio and Amano, Hiroshi},
 issue = {24},
 journal = {Applied Physics Letters},
 month = {Dec},
 note = {We have demonstrated a fabrication process for the Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg. An Ohmic contact with a contact resistance of 0.158 Ω cm^2 is realized on p−-GaN ([Mg] = 1.3 × 10^17 cm^−3). The contact resistance of p-type GaN with higher Mg concentration ([Mg]=1.0 × 10^19 cm^−3) can also be reduced to 2.8 × 10^−5 Ω cm^2. A localized contact layer is realized without any etching or regrowth damage. The mechanism underlying this reduced contact resistance is studied by scanning transmission electron microscopy with energy dispersive x-ray spectroscopy and secondary ion mass spectrometry, representing a mutual diffusion of Ga and Mg atoms on the interface. Reductions in the barrier height and surface depletion width with the nitrogen-annealed Mg layer are confirmed by XPS and Hall effect measurements qualitatively.},
 title = {Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg},
 volume = {119},
 year = {2021}
}