ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "afdfe902-7800-406e-aa51-a0a0e263245c"}, "_deposit": {"created_by": 17, "id": "2002697", "owner": "17", "owners": [17], "owners_ext": {"displayname": "repository", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2002697"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02002697", "sets": ["675"]}, "author_link": [], "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_1629683748249": {"attribute_name": "日付", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2023-02-01", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2022-02", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2", "bibliographicPageStart": "021003", "bibliographicVolumeNumber": "15", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Express", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "We evaluated the beam current dependence of defect formation during Mg ion implantation into GaN at a high temperature of 1100 °C with two beam currents. Photoluminescence spectra suggest that low-beam-current implantation reduced the vacancy concentration and activated Mg to a greater extent. Moreover, scanning transmission electron microscopy analysis showed that low-beam-current implantation reduced the density of Mg segregation defects with inactive Mg and increased the density of intrinsic dislocation loops, suggesting decreases in the densities of Ga and N vacancies. The formation of these defects depended on beam current, which is an important parameter for defect suppression.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.35848/1882-0786/ac481b", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "This is the Accepted Manuscript version of an article accepted for publication in [Applied Physics Express]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1882-0786/ac481b]", "subitem_rights_language": "en"}, {"subitem_rights": "“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "1882-0778", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "embargoed access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_f1cf"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Itoh, Yuta", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Watanabe, Hirotaka", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ando, Yuto", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Kano, Emi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Deki, Manato", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Tanaka, Atsushi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ikarashi, Nobuyuki", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2023-02-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Yuta_ITOH_article_revised.pdf", "filesize": [{"value": "895 KB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "application/pdf", "size": 895000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2002697/files/Yuta_ITOH_article_revised.pdf"}, "version_id": "119ee247-1f0e-46ee-92e7-244438a0e008"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/0002002697", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2022-05-10"}, "publish_date": "2022-05-10", "publish_status": "0", "recid": "2002697", "relation": {}, "relation_version_is_last": true, "title": ["Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN"], "weko_shared_id": -1}
  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN

http://hdl.handle.net/2237/0002002697
http://hdl.handle.net/2237/0002002697
d6ce6a53-3fc6-43e6-a10b-4eb859e13132
名前 / ファイル ライセンス アクション
Yuta_ITOH_article_revised.pdf Yuta_ITOH_article_revised.pdf (895 KB)
Item type itemtype_ver1(1)
公開日 2022-05-10
タイトル
タイトル Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN
言語 en
著者 Itoh, Yuta

× Itoh, Yuta

en Itoh, Yuta

Search repository
Watanabe, Hirotaka

× Watanabe, Hirotaka

en Watanabe, Hirotaka

Search repository
Ando, Yuto

× Ando, Yuto

en Ando, Yuto

Search repository
Kano, Emi

× Kano, Emi

en Kano, Emi

Search repository
Deki, Manato

× Deki, Manato

en Deki, Manato

Search repository
Nitta, Shugo

× Nitta, Shugo

en Nitta, Shugo

Search repository
Honda, Yoshio

× Honda, Yoshio

en Honda, Yoshio

Search repository
Tanaka, Atsushi

× Tanaka, Atsushi

en Tanaka, Atsushi

Search repository
Ikarashi, Nobuyuki

× Ikarashi, Nobuyuki

en Ikarashi, Nobuyuki

Search repository
Amano, Hiroshi

× Amano, Hiroshi

en Amano, Hiroshi

Search repository
アクセス権
アクセス権 embargoed access
アクセス権URI http://purl.org/coar/access_right/c_f1cf
権利
言語 en
権利情報 This is the Accepted Manuscript version of an article accepted for publication in [Applied Physics Express]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1882-0786/ac481b]
権利
言語 en
権利情報 “This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
内容記述
内容記述 We evaluated the beam current dependence of defect formation during Mg ion implantation into GaN at a high temperature of 1100 °C with two beam currents. Photoluminescence spectra suggest that low-beam-current implantation reduced the vacancy concentration and activated Mg to a greater extent. Moreover, scanning transmission electron microscopy analysis showed that low-beam-current implantation reduced the density of Mg segregation defects with inactive Mg and increased the density of intrinsic dislocation loops, suggesting decreases in the densities of Ga and N vacancies. The formation of these defects depended on beam current, which is an important parameter for defect suppression.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.35848/1882-0786/ac481b
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 1882-0778
書誌情報 en : Applied Physics Express

巻 15, 号 2, p. 021003, 発行日 2022-02
ファイル公開日
日付 2023-02-01
日付タイプ Available
戻る
0
views
See details
Views

Versions

Ver.1 2022-05-10 04:08:21.126207
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3