{"_buckets": {"deposit": "afdfe902-7800-406e-aa51-a0a0e263245c"}, "_deposit": {"created_by": 17, "id": "2002697", "owner": "17", "owners": [17], "owners_ext": {"displayname": "repository", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2002697"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02002697", "sets": ["675"]}, "author_link": [], "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_1629683748249": {"attribute_name": "日付", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2023-02-01", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2022-02", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2", "bibliographicPageStart": "021003", "bibliographicVolumeNumber": "15", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Express", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "We evaluated the beam current dependence of defect formation during Mg ion implantation into GaN at a high temperature of 1100 °C with two beam currents. Photoluminescence spectra suggest that low-beam-current implantation reduced the vacancy concentration and activated Mg to a greater extent. Moreover, scanning transmission electron microscopy analysis showed that low-beam-current implantation reduced the density of Mg segregation defects with inactive Mg and increased the density of intrinsic dislocation loops, suggesting decreases in the densities of Ga and N vacancies. The formation of these defects depended on beam current, which is an important parameter for defect suppression.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.35848/1882-0786/ac481b", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "This is the Accepted Manuscript version of an article accepted for publication in [Applied Physics Express]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1882-0786/ac481b]", "subitem_rights_language": "en"}, {"subitem_rights": "“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "1882-0778", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "embargoed access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_f1cf"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Itoh, Yuta", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Watanabe, Hirotaka", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ando, Yuto", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Kano, Emi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Deki, Manato", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Tanaka, Atsushi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ikarashi, Nobuyuki", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2023-02-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Yuta_ITOH_article_revised.pdf", "filesize": [{"value": "895 KB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "application/pdf", "size": 895000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2002697/files/Yuta_ITOH_article_revised.pdf"}, "version_id": "119ee247-1f0e-46ee-92e7-244438a0e008"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/0002002697", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2022-05-10"}, "publish_date": "2022-05-10", "publish_status": "0", "recid": "2002697", "relation": {}, "relation_version_is_last": true, "title": ["Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN"], "weko_shared_id": -1}