@article{oai:nagoya.repo.nii.ac.jp:02002697,
 author = {Itoh, Yuta and Watanabe, Hirotaka and Ando, Yuto and Kano, Emi and Deki, Manato and Nitta, Shugo and Honda, Yoshio and Tanaka, Atsushi and Ikarashi, Nobuyuki and Amano, Hiroshi},
 issue = {2},
 journal = {Applied Physics Express},
 month = {Feb},
 note = {We evaluated the beam current dependence of defect formation during Mg ion implantation into GaN at a high temperature of 1100 °C with two beam currents. Photoluminescence spectra suggest that low-beam-current implantation reduced the vacancy concentration and activated Mg to a greater extent. Moreover, scanning transmission electron microscopy analysis showed that low-beam-current implantation reduced the density of Mg segregation defects with inactive Mg and increased the density of intrinsic dislocation loops, suggesting decreases in the densities of Ga and N vacancies. The formation of these defects depended on beam current, which is an important parameter for defect suppression.},
 title = {Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN},
 volume = {15},
 year = {2022}
}