@article{oai:nagoya.repo.nii.ac.jp:02003787,
 author = {Chen, M. Y. and Iida, K. and Kondo, K. and Hänisch, J. and Hatano, T. and Ikuta, H.},
 issue = {5},
 journal = {Physical Review Materials},
 month = {May},
 note = {With molecular beam epitaxy and a topotactic chemical reaction, we prepared NdFeAs(O,H) epitaxial thin films with various hydrogen concentrations on 5° vicinal-cut MgO substrates. By measuring the resistivities along the longitudinal and transversal directions, the ab-plane and the c-axis resistivities (ρab and ρc) were obtained. The resistivity anisotropy γρ≡ρc/ρab of NdFeAs(O,H) with various hydrogen concentrations was compared with that of NdFeAs(O,F). At the H concentrations which led to superconducting transition temperatures Tc over 40 K, γρ recorded ∼100–150 at 50 K. On the other hand, a low γρ value of 9 was observed with the highest-doped sample. The exponent β of the ab-plane resistivity obtained by fitting a power-law expression ρab(T)=ρ0+AT^β to the data was close to unity down to a low temperature in the vicinity where the second antiferromagnetic phase locates, which may be related to the quantum critical point discussed at the overdoped side of the phase diagram.},
 title = {Inter- to intra-layer resistivity anisotropy of NdFeAs(O,H) with various hydrogen concentrations},
 volume = {6},
 year = {2022}
}