{"created":"2022-11-14T00:38:50.157627+00:00","id":2003985,"links":{},"metadata":{"_buckets":{"deposit":"37291fc8-5a98-446b-b9d4-81563677d8fe"},"_deposit":{"created_by":17,"id":"2003985","owner":"17","owners":[17],"owners_ext":{"displayname":"repository","username":"repository"},"pid":{"revision_id":0,"type":"depid","value":"2003985"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:02003985","sets":["673:674:675"]},"author_link":[],"control_number":"2003985","item_1615768549627":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_9_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2022-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"22","bibliographicPageStart":"222101","bibliographicVolumeNumber":"121","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_9_description_4":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Previously reported UV-C laser diodes (LD) structures have been subject to design constraints owing to dark line defects at the edge of the mesa stripe after device fabrication. To address this issue, a detailed analysis revealed that the dark line defects were dislocations generated by local residual shear stresses associated with mesa formation on highly strained epitaxial layers. A technique for controlling the local concentration of shear stress, using a sloped mesa geometry, was proposed based on the insights gained by modeling the stress distribution at the edge of the mesa stripe. Experimental results showed that this technique succeeded in completely suppressing the emergence of dark-line defects. This technique will be useful in improving the performance of pseudomorphic AlGaN/AlN-based optoelectronic device including UV-C LDs.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_9_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing","subitem_publisher_language":"en"}]},"item_9_relation_43":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/5.0124512","subitem_relation_type_select":"DOI"}}]},"item_9_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"“The following article has been accepted by [Applied Physics Letters]. After it is published, it will be found at \"https://doi.org/10.1063/5.0124512”.","subitem_rights_language":"en"}]},"item_9_source_id_7":{"attribute_name":"収録物識別子","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kushimoto, Maki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Zhang, Ziyi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Yoshikawa, Akira","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Aoto, Koji","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Honda, Yoshio","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Sasaoka, Chiaki","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Schowalter, Leo J.","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Amano,  Hiroshi","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-11-24"}],"displaytype":"detail","filename":"manuscript_kushi.pdf","filesize":[{"value":"4.2 MB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/2003985/files/manuscript_kushi.pdf"},"version_id":"e52d9c91-9cf4-4b5c-a35a-1b5ed7c4b8e2"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes","subitem_title_language":"en"}]},"item_type_id":"40001","owner":"17","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-11-24"},"publish_date":"2022-11-24","publish_status":"0","recid":"2003985","relation_version_is_last":true,"title":["Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes"],"weko_creator_id":"17","weko_shared_id":-1},"updated":"2023-06-12T01:40:21.155570+00:00"}