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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates

http://hdl.handle.net/2237/0002004224
http://hdl.handle.net/2237/0002004224
7e2350ec-0639-4752-a57f-1a6f530876ed
名前 / ファイル ライセンス アクション
HVPEGaNBCF_Ohnishv9.pdf HVPEGaNBCF_Ohnishv9.pdf (818 KB)
 Download is available from 2024/8/14.
Item type itemtype_ver1(1)
公開日 2022-11-29
タイトル
タイトル Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
言語 en
著者 Ohnishi, Kazuki

× Ohnishi, Kazuki

en Ohnishi, Kazuki

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Fujimoto, Naoki

× Fujimoto, Naoki

en Fujimoto, Naoki

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Nitta, Shugo

× Nitta, Shugo

en Nitta, Shugo

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Watanabe, Hirotaka

× Watanabe, Hirotaka

en Watanabe, Hirotaka

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Honda, Yoshio

× Honda, Yoshio

en Honda, Yoshio

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Amano, Hiroshi

× Amano, Hiroshi

en Amano, Hiroshi

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アクセス権
アクセス権 embargoed access
アクセス権URI http://purl.org/coar/access_right/c_f1cf
権利
言語 en
権利情報 © 2022. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
キーワード
主題Scheme Other
主題 A1. Growth models
キーワード
主題Scheme Other
主題 A1. Surface kinetics
キーワード
主題Scheme Other
主題 A3. Hydride vapor phase epitaxy
キーワード
主題Scheme Other
主題 B1. Nitrides
内容記述
内容記述 The effects of halide vapor phase epitaxial (HVPE) growth conditions such as input V/III ratio and substrate off-cut angle on the surface morphology of n-type GaN layers grown on GaN (0001) freestanding substrates were investigated to develop a model for growing smooth surfaces. The spiral hillock density increased with increasing input V/III ratio and/or decreasing off-cut angle. The critical off-cut angle between the spiral growth and the step-flow growth depended on the vapor supersaturation calculated by thermodynamic analysis. To understand the transition of the growth mode, we proposed a Burton–Cabrera–Frank-theory-based model considering the effect of spiral growth, which was utilized to explain the obtained experimental results. The developed growth model can be effective for predicting the HVPE growth mode between the spiral growth and the step-flow growth.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 Elsevier
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.jcrysgro.2022.126749
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 00220248
書誌情報 en : Journal of Crystal Growth

巻 592, p. 126749, 発行日 2022-08-15
ファイル公開日
日付 2024-08-15
日付タイプ Available
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