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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC

http://hdl.handle.net/2237/0002004227
http://hdl.handle.net/2237/0002004227
fb9b3e3a-2fe4-4977-9ad6-3a7e9ffb06fd
名前 / ファイル ライセンス アクション
SH220609_rev2.pdf SH220609_rev2.pdf (2.3 MB)
 Download is available from 2023/8/31.
Item type itemtype_ver1(1)
公開日 2022-11-29
タイトル
タイトル Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC
言語 en
著者 Isono, Masaru

× Isono, Masaru

en Isono, Masaru

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Harada, Shunta

× Harada, Shunta

en Harada, Shunta

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Kutsukake, Kentaro

× Kutsukake, Kentaro

en Kutsukake, Kentaro

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Yokoyama, Tomoo

× Yokoyama, Tomoo

en Yokoyama, Tomoo

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Tagawa, Miho

× Tagawa, Miho

en Tagawa, Miho

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Ujihara, Toru

× Ujihara, Toru

en Ujihara, Toru

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アクセス権
アクセス権 embargoed access
アクセス権URI http://purl.org/coar/access_right/c_f1cf
権利
言語 en
権利情報 "This is the peer reviewed version of the following article: [ Isono, M., Harada, S., Kutsukake, K., Yokoyama, T., Tagawa, M., Ujihara, T., Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC. Adv. Theory Simul. 2022, 5, 2200302. https://doi.org/10.1002/adts.202200302], which has been published in final form at [https://doi.org/10.1002/adts.202200302]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited."
内容記述
内容記述 The macroscopic distribution of fluid flows, which affect the quality of final products for various kinds of materials, is often difficult to describe in mathematical formulae and hinders the implementation of empirical knowledge in scaling up. In the present study, the characteristics of the flow distribution in silicon carbide (SiC) solution growth are described by using the position of the saddle point and the solution growth conditions are optimized by computational fluid dynamics simulation, machine learning, and a genetic algorithm. As a result, the candidates of the optimal condition for the solution growth of 6-in. SiC crystals are successfully obtained from the empirical knowledge gained from 3-in. crystal growth, by adding the topological description to the objective function. The present design of the objective function using the topological description can possibly be applied to other crystal growth or materials processing problems and to overcome scale-up difficulties, which can facilitate the rapid development of functional materials such as SiC wafers for power device applications.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 Wiley
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1002/adts.202200302
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 2513-0390
書誌情報 en : Advanced Theory and Simulations

巻 5, 号 9, p. 2200302, 発行日 2022-09
ファイル公開日
日付 2023-09-01
日付タイプ Available
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