{"_buckets": {"deposit": "7103c4eb-2fcc-47e7-9cb4-2f8b7810a59c"}, "_deposit": {"created_by": 17, "id": "2004229", "owner": "17", "owners": [17], "owners_ext": {"displayname": "repository", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2004229"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02004229", "sets": ["675"]}, "author_link": [], "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2022-07-15", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageStart": "035309", "bibliographicVolumeNumber": "106", "bibliographic_titles": [{"bibliographic_title": "Physical Review B", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "We report first-principles total-energy electronic-structure calculations, based on density-functional theory, that unveil detailed atomic structures of hydrogen-adsorbed step edges and their energetics of the silicon carbide (SiC) (0001) surface. The obtained adsorption energy of the hydrogen atom at each step reveals the microscopic reason for the step morphology on the Si-face SiC(0001) surfaces which are commonly inclined toward the ⟨11¯20⟩ direction in epitaxial growth. The calculated hydrogen coverages at each step and also on the surface terrace clearly identify the favorable reaction sites for the epitaxial growth, such as chemical vapor deposition (CVD) in which hydrogen is ubiquitous. The obtained results provide a firm theoretical framework to discuss the atom-scale mechanism of the epitaxial growth of SiC.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Physical Society", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1103/PhysRevB.106.035309", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2022 American Physical Society", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "2469-9950", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kimura, Tomoya", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Chokawa, Kenta", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Shiraishi, Kenji", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Oshiyama, Atsushi", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2022-11-30"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "PhysRevB_106_035309.pdf", "filesize": [{"value": "5.1 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "application/pdf", "size": 5100000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2004229/files/PhysRevB_106_035309.pdf"}, "version_id": "d9ad2415-341f-4fee-9b5f-71fdaba6bd71"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/0002004229", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2022-11-30"}, "publish_date": "2022-11-30", "publish_status": "0", "recid": "2004229", "relation": {}, "relation_version_is_last": true, "title": ["Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth"], "weko_shared_id": -1}