{"_buckets": {"deposit": "deae7519-4e54-4182-8a2b-0db02b266446"}, "_deposit": {"created_by": 17, "id": "2007332", "owner": "17", "owners": [17], "owners_ext": {"displayname": "repository", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2007332"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02007332"}, "author_link": [], "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_1629683748249": {"attribute_name": "日付", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2024-08-01", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2023-08", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "16", "bibliographicPageStart": "2200739", "bibliographicVolumeNumber": "220", "bibliographic_titles": [{"bibliographic_title": "physica status solidi (a)", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "The metal stop laser drilling of GaN-on-GaN devices is demonstrated using a UV sub-nanosecond laser as a light source. By monitoring the Bremsstrahlung emission at the drilling point, metal stops with a precision higher than 1 μm are realized for vias with a depth of 100 μm. From in situ laser-induced breakdown spectroscopy measurements, it is shown that endpoint detection is realized with high signal-to-noise ratio owing to the difference in the emission process between the strongly excited semiconductor and the metal. Herein, a through-substrate electrode with a resistance of less than 5 mΩ on GaN-on-GaN high-electron-mobility transistor (HEMT) wafers is demonstrated. The fabrication of through-substrate electrodes by this technique provides a simple process that does not require lithography or other complex processes. This process is expected to be useful in the fabrication of future GaN-on-GaN devices, including very thin GaN-on-GaN HEMTs.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Wiley", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1002/pssa.202200739", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "\"This is the peer reviewed version of the following article: [Sasaoka, C., Ando, Y., Takahashi, H., Ikarashi, N. and Amano, H. (2023), Metal Stop Laser Drilling for Blind via Holes of GaN-on-GaN Devices. Phys. Status Solidi A, 220: 2200739. https://doi.org/10.1002/pssa.202200739], which has been published in final form at [https://doi.org/10.1002/pssa.202200739]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.\"", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "1862-6300", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "embargoed access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_f1cf"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Sasaoka, Chiaki", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ando, Yuji", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Takahashi, Hidemasa", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ikarashi, Nobuyuki", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2024-08-01"}], "displaytype": "detail", "download_preview_message": "Download / Preview is available from 2024/7/31.", "file_order": 0, "filename": "pssa-202200739-2023-02-06-rev-2023-09-14.pdf", "filesize": [{"value": "939 KB"}], "format": "application/pdf", "future_date_message": "Download is available from 2024/7/31.", "is_thumbnail": false, "mimetype": "application/pdf", "size": 939000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2007332/files/pssa-202200739-2023-02-06-rev-2023-09-14.pdf"}, "version_id": "ca7a09b1-6459-4d86-a615-3141ee23c0d1"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/0002007332", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2023-09-14"}, "publish_date": "2023-09-14", "publish_status": "0", "recid": "2007332", "relation": {}, "relation_version_is_last": true, "title": ["Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices"], "weko_shared_id": -1}