| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2024-05-24 |
| タイトル |
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タイトル |
Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs |
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言語 |
en |
| 著者 |
Yoshikawa, Akira
Zhang, Ziyi
Kushimoto, Maki
Aoto, Koji
Sasaoka, Chiaki
Amano, Hiroshi
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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権利情報 |
Copyright 2023 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters. 123, 221105 (2023)) and may be found at (https://doi.org/10.1063/5.0183320). |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
One approach to improving the output power of ultraviolet (UV-C) light-emitting diodes (LEDs) is to adopt an electron-blocking layer (EBL) with a high barrier. However, the intended effect may not be realized because of the composition pulling effect, which is the unintended occurrence of a gradient layer at an AlGaN/AlGaN hetero-interface with substantial differences in the Al composition. Here, we demonstrate that low-temperature growth (i.e., <1000 °C) can be used to control the unintentional gradient layer at an AlN/AlGaN hetero-interface between a barrier layer and AlN-EBL with a difference in Al compositions of more than 30%. LEDs with an emission wavelength of 265 nm were fabricated, and an AlN-EBL was grown at low temperature to realize an abrupt interface. At an applied current of 100 mA, growing the EBL under low-temperature conditions improved the forward voltage by 0.5 V and remarkably improved the peak luminous intensity by 1.4–1.6 times. Our results can be used to realize UV-C LEDs with a steep EBL and further improve their device characteristics. |
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言語 |
en |
| 出版者 |
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出版者 |
AIP Publishing |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1063/5.0183320 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0003-6951 |
| 書誌情報 |
en : Applied Physics Letters
巻 123,
号 22,
p. 221105,
発行日 2023-11-27
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| ファイル公開日 |
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日付 |
2024-11-27 |
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日付タイプ |
Available |
221105_1_5_0183320.pdf (2.2 MB)
