| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2024-05-24 |
| タイトル |
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タイトル |
Sn-doped n-type GaN layer with high electron density of 1020 cm^−3 grown by halide vapor phase epitaxy |
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言語 |
en |
| 著者 |
Hamasaki, Kansuke
Ohnishi, Kazuki
Nitta, Shugo
Fujimoto, Naoki
Watanabe, Hirotaka
Honda, Yoshio
Amano, Hiroshi
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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権利情報 |
© 2024. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
A Sn-doped n-type GaN layer with a high electron density of 2 × 10^20 cm^−3 and a low resistivity of 8.7 × 10^−4 Ω∙cm was grown by halide vapor phase epitaxy (HVPE). Sn doping was performed through the reaction between Sn metal and HCl gas. The Sn concentration markedly increased with decreasing growth temperature and the activation energy of Sn desorption from the GaN surface was found to be 4.1 eV. Smooth surfaces were obtained by introducing the Sn precursor even though the samples were grown at a low temperature of 905 °C, suggesting that Sn atoms act as surfactants and promote the migration of Ga adatoms. Almost all the Sn atoms act as donors in GaN below the Sn concentration of 2 × 10^20 cm^−3. These results indicate that using the Sn donor is promising for fabricating low-resistivity n-type GaN substrates by HVPE. |
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言語 |
en |
| 出版者 |
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出版者 |
Elsevier |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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関連タイプ |
isVersionOf |
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|
識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1016/j.jcrysgro.2023.127529 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
00220248 |
| 書誌情報 |
en : Journal of Crystal Growth
巻 628,
p. 127529,
発行日 2024-02-15
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| ファイル公開日 |
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日付 |
2026-02-15 |
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日付タイプ |
Available |
Manuscript_reviced2-1_Hamasaki.pdf (711 KB)
