| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2024-10-28 |
| タイトル |
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タイトル |
Ge1−xSnx layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping |
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言語 |
en |
| 著者 |
Shibayama, Shigehisa
Takagi, Komei
Sakashita, Mitsuo
Kurosawa, Masashi
Nakatsuka, Osamu
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| アクセス権 |
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アクセス権 |
embargoed access |
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アクセス権URI |
http://purl.org/coar/access_right/c_f1cf |
| 権利 |
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権利情報 |
© 2024. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
Ge1−xSnx with x∼25%, group-IV alloy semiconductor, is highly attracted to mid-infrared (MIR) photodetector applications because of its narrow bandgap with ∼0.25 eV, the compatibility to the Si integrated circuit platform, and lattice matching of Ge0.75Sn0.25 to InP substrate. Although the heteroepitaxial growth of Ge0.75Sn0.25 on InP has been reported, the basic physical properties of Ge0.75Sn0.25 have not yet been clarified. In this study, we discuss three topics: (1) understanding the crystalline growth features of Ge0.75Sn0.25 on InP, (2) revealing the thermal stability of Ge0.75Sn0.25, and (3) developing a carrier-control technique. First, we found that a low-temperature molecular beam epitaxy could achieve a Ge0.75Sn0.25 layer with superior crystallinity without dislocations. However, low Sn-content Ge1−xSnx regions are locally formed during the Ge0.75Sn0.25 heteroepitaxy; the origins of the low Sn-content Ge1−xSnx regions were discussed by transmission electron microscopy analysis. In addition, we found that lowering the growth temperature from 100 °C to 70 °C also effectively reduces the area of the low Sn-content Ge1−xSnx regions. Next, we found that Ge0.75Sn0.25 layers grown at 70 °C sustain thermal stability up to 200 °C without causing crystalline degradations. Finally, we demonstrated the in-situ Sb doping to Ge0.75Sn0.25. We found that the undoped and in-situ Sb-doped Ge0.75Sn0.25 layers exhibited p-type and n-type conduction, respectively, with carrier concentrations of order 1019 cm−3 by Hall effect measurement. This study suggests the MIR photodetector application is practically possible using low-temperature processes with process temperatures lower than 200 °C. |
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言語 |
en |
| 出版者 |
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出版者 |
Elsevier |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1016/j.mssp.2024.108302 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
13698001 |
| 書誌情報 |
en : Materials Science in Semiconductor Processing
巻 176,
p. 108302,
発行日 2024-06-15
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| ファイル公開日 |
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日付 |
2026-06-15 |
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日付タイプ |
Available |
MSSP-D-23-03234_revision_Shigehisa_SHIBAYAMA.pdf (1.2 MB)
