| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2024-10-28 |
| タイトル |
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タイトル |
Self-organized Ge1−xSnx quantum dots formed on insulators and their room temperature photoluminescence |
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言語 |
en |
| 著者 |
Hashimoto, Kaoru
Shibayama, Shigehisa
Asaka, Koji
Sakashita, Mitsuo
Kurosawa, Masashi
Nakatsuka, Osamu
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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|
権利情報 |
This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1347-4065/ace5f9]. |
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言語 |
en |
| 権利 |
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権利情報 |
“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to” |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
In this study, we examined the self-organized formation of Ge1−xSnx quantum dots (QDs) on insulators based on a simple sputtering process and considered their luminescence properties. First, we systematically discussed the control factors in the self-organized formation of Ge1−xSnx QDs; the introduced Sn content and the deposition temperature should be related to the surface-migration of Sn atoms. Under sufficiently controlled conditions, we achieved the self-organized formation of Ge1−xSnx QDs surrounded by amorphous-like shells with a dot size of 9.3 nm, Sn content of 19% ± 10%, and dot density of 1.5 × 10^11 cm−2 and they showed a 2.0 μm photoluminescence peak at RT. Furthermore, the formation of multilayered Ge1−xSnx QDs structures was demonstrated, and they exhibited excellent thermal stability up to 400 °C while maintaining a dot-like morphology without causing the agglomeration. Therefore, the self-organized formation of Ge1−xSnx QDs is useful for realizing light-emitting devices for optical interconnects. |
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言語 |
en |
| 出版者 |
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出版者 |
IOP publishing |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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関連タイプ |
isVersionOf |
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|
識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.35848/1347-4065/ace5f9 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0021-4922 |
| 書誌情報 |
en : Japanese Journal of Applied Physics
巻 62,
号 7,
p. 075506,
発行日 2023-07-31
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JJAP-105077R1_GeSn_QDs_revised_marked_Shigehisa_SHIBAYAMA.pdf (1.6 MB)
