| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2024-11-22 |
| タイトル |
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タイトル |
Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer |
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言語 |
en |
| 著者 |
Ando, Yuji
Oishi, Kensuke
Takahashi, Hidemasa
Makisako, Ryutaro
Wakejima, Akio
Suda, Jun
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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権利情報 |
“© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.” |
|
言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
AlGaN/GaN gated-anode diodes (GADs) have been proposed as microwave rectifying devices for microwave wireless power transmission (WPT) systems. However, achieving the desired turn-on voltage ( Von ) has posed a critical challenge due to the requirement for precise etching control. This article introduces a novel GAD structure aimed at enhancing productivity. In this new configuration, a GaN etch endpoint detection layer (GaN marker layer) is incorporated into the AlGaN layer, positioned approximately 4.5 nm away from the channel interface. During gate recess etching, the residual thickness of AlGaN is monitored using an optical interferometer. Etching is halted successfully upon detection of the GaN marker layer, signaled by an abrupt change in interference. Fabricated GADs consistently achieved the target Von of +0.20 V, exhibiting improved uniformity compared to prior GADs lacking a GaN marker layer. These devices typically demonstrated a maximum forward current of 0.69 A/mm and a reverse breakdown voltage exceeding 100 V. Additionally, a bridge-type rectifier circuit employing four GADs was simulated using a SPICE model constructed from measured pulse I–V characteristics and S-parameters. A conversion efficiency of 84% was predicted with an input power of 25.6 W (8 W/mm) at 5.8 GHz. |
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言語 |
en |
| 出版者 |
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出版者 |
IEEE |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
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|
出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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関連タイプ |
isVersionOf |
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|
識別子タイプ |
DOI |
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|
関連識別子 |
https://doi.org/10.1109/TED.2024.3381570 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0018-9383 |
| 書誌情報 |
en : IEEE Transactions on Electron Devices
巻 71,
号 5,
p. 2936-2942,
発行日 2024-05
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FINAL_VERSION.pdf (1.5 MB)
