| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-01-23 |
| タイトル |
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タイトル |
Stress analysis and dislocation cluster generation in silicon crystal with artificial grain boundaries |
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言語 |
en |
| 著者 |
Tajika, Haruki
Kutsukake, Kentaro
Usami, Noritaka
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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|
権利情報 |
© 2024. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
We conducted a dislocation and stress analysis on various grain boundaries (GBs) using silicon ingots that contained artificial GBs to permit systematic comparison of experimental and analytical results. Through photoluminescence imaging, we found that the number of dislocation clusters generated around the 〈1 1 0〉-oriented GBs was significantly higher than those around the 〈1 0 0〉-oriented GBs. The stress analysis revealed that this difference is linked to the maximum shear stress around the GB. However, there were some GBs where dislocation cluster generation was not observed despite the presence of high shear stress. For most of these GBs, the direction of the maximum shear stress in the 12 slip system of silicon crystal was found to be oblique downward to the growth direction, which appears to inhibit dislocation propagation. |
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言語 |
en |
| 出版者 |
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出版者 |
Elsevier |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
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|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1016/j.jcrysgro.2024.127922 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0022-0248 |
| 書誌情報 |
en : Journal of Crystal Growth
巻 649,
p. 127922,
発行日 2024-01-01
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| ファイル公開日 |
|
|
日付 |
2026-01-01 |
|
日付タイプ |
Available |
JCG_CGCT9_ver5.pdf (676 KB)
