| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-01-23 |
| タイトル |
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タイトル |
Atomic-structure changes of 30° partial-dislocation cores due to excess carriers in GaP |
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言語 |
en |
| 著者 |
Hoshino, Sena
Oi, Shuji
Ogura, Yu
Yokoi, Tatsuya
Li, Yan
Nakamura, Atsutomo
Matsunaga, Katsuyuki
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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権利情報 |
© 2024 American Physical Society |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
It was experimentally reported that light illumination leads to reduced deformation stresses in some III-V compound semiconductors such as GaP. This phenomenon is known as the negative photoplastic effect, which is expected to originate from interactions between photoexcited carriers and glide dislocations. To clarify its physical origin at the atomic and electronic levels, density-functional-theory calculations were performed for Shockley 30∘ partial dislocations in GaP. In the absence of excess carriers, both Ga and P cores of the partial dislocations were found to have reconstructed structures that are energetically most stable. This can be understood by the fact that dangling-bond-like states at undercoordinated atoms of the dislocation cores are removed by core reconstruction. In the presence of excess carriers that would be formed by light illumination, the reconstructed Ga and P cores were able to trap excess holes and electrons, respectively, and were subsequently transformed to unreconstructed structures. It was also found that the unreconstructed structures due to excess carriers tend to have smaller potential barrier heights for dislocation glide, as compared to the pristine reconstructed structures without any excess carriers. This is in good agreement with the increased dislocation mobility in GaP under external light illumination that has been experimentally reported. |
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言語 |
en |
| 出版者 |
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出版者 |
American Physical Society |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1103/PhysRevMaterials.8.093605 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
2475-9953 |
| 書誌情報 |
en : Physical Review Materials
巻 8,
号 9,
p. 093605,
発行日 2024-09
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PhysRevMaterials_8_093605.pdf (2.1 MB)
