| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-06-04 |
| タイトル |
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タイトル |
Dopant site analysis of heavily Si-doped GaAs using a combination of electron microscopy and synchrotron radiation |
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言語 |
en |
| 著者 |
Saito, Genki
Ishizuka, Akimitsu
Ohtsuka, Masahiro
Ito, Shuma
Okajima, Toshihiro
Muto, Shunsuke
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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権利情報 |
© 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercial- NoDerivs 4.0 International (CC BY-NC-ND) license (https://creativecommons.org/licenses/by-nc-nd/4.0/). https://doi.org/10.1063/5.0238327 |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
Silicon (Si) acts as an amphoteric impurity in gallium arsenide (GaAs), occupying various sites and exhibiting different coordination structures within the material. In this study, we employed electron microscopy, x-ray absorption spectroscopy, and theoretical simulations to analyze the Si-occupied sites and local coordination structures at concentrations ranging from 2 to 4 × 1019 atoms/cm3 in heavily doped GaAs. High angular resolution electron channeling x-ray spectroscopy was employed to analyze the Si-occupied sites. This method quantitatively estimates site occupancies through statistical analysis of atom site-dependent spectra. It was observed that Si substitutes for both Ga and As sites with nearly equal occupancies. Si K-edge x-ray absorption fine structure (XAFS) measurements and density functional theory calculations were used to explore the local coordination structures of Si. The peak positions of experimental XAFS spectra aligned closely with those of the calculated XAFS spectra for neutral Si_Ga–Si_As dumbbells, particularly when Si atoms were in close proximity. Considering the effect of vacancies, the experimental XAFS peak position corresponded well with that of the calculated Si dumbbell–V_As pair. In addition, the observed pre-peak was attributed to neutral Si, likely originating from Si clusters. These findings enhance our understanding of Si-related defect structures and their influence on the properties of heavily Si-doped GaAs. |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Other |
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内容記述 |
dataset: http://hdl.handle.net/2237/0002012811 |
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言語 |
en |
| 出版者 |
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出版者 |
AIP Publishing |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1063/5.0238327 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0021-8979 |
| 書誌情報 |
en : Journal of Applied Physics
巻 137,
号 2,
p. 025703,
発行日 2025-01-14
|
025703_1_5_0238327.pdf (1.6 MB)
