| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-06-20 |
| タイトル |
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タイトル |
Normally-off AlGaN/GaN MIS-HEMTs with high 2DEG mobility enabled by shallow recess and oxygen plasma treatment |
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言語 |
en |
| 著者 |
Ishiguro, Masaki
Sekiyama, Kishi
Baratov, Ali
Maeda, Shogo
Igarashi, Takahiro
Tajuddin, Nur Syazwani Binti Ahmad
Islam, Naeemul
Terai, Suguru
Yamamoto, Akio
Kuzuhara, Masaaki
Sarkar, Biplab
Amano, Hiroshi
Asubar, Joel T.
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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|
権利情報 |
This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1347-4065/adb256]. |
|
言語 |
en |
| 権利 |
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|
権利情報 |
“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to” |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
We demonstrate a normally-off operation in Al2O3/AlGaN/GaN MIS-HEMTs with a high two-dimensional electron gas (2DEG) mobility enabled by a shallow recess channel structure and oxygen plasma treatment. In the channel region, the original 25-nm-thick AlGaN barrier layer was thinned down to 9 nm, which in principle, should yield a normally-on operation. However, we show that a pre-insulator deposition oxygen plasma treatment shifts the threshold voltage to +1.4 V. The relatively thick AlGaN barrier facilitated a minimal sacrifice of channel 2DEG mobility retaining a value as high as 1800 cm2V^−1s^−1, resulting in a high drain current of 600 mA mm^−1. |
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言語 |
en |
| 出版者 |
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出版者 |
IOP publishing |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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|
関連タイプ |
isVersionOf |
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|
識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.35848/1347-4065/adb256 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0021-4922 |
| 書誌情報 |
en : JAPANESE JOURNAL OF APPLIED PHYSICS
巻 64,
号 2,
p. 020904,
発行日 2025-02-17
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| ファイル公開日 |
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日付 |
2026-02-17 |
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日付タイプ |
Available |
1_ISHIGURO_et_al_JJAP_LETT_2025-01-25_clean.pdf (783 KB)
