| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-07-23 |
| タイトル |
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タイトル |
Modeling and Designing a GaN-Growth Reactor With Halogen-Free Vapor Phase Epitaxy: NH3 Decomposition at the Catalytic Surface of Components to Replicate Parasitic Polycrystal Formation |
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言語 |
en |
| 著者 |
Shimazu, Hiroki
Nishizawa, Shin-Ichi
Nitta, Shugo
Amano, Hiroshi
Nakamura, Daisuke
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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権利情報 |
“© 2025 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.” |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
Achieving long-duration, large bulk GaN growth is crucial to supply low-cost, high-quality GaN. Halogen-free vapor phase epitaxy (HF-VPE) is a promising method for bulk GaN growth but faces challenges due to severe polycrystals deposition on reactor components, such as the source-gas nozzles, which impedes stable, extended growth. In this study, we developed models to simulate the polycrystal deposition in HF-VPE-GaN growth conditions by including surface reactions of GaN formation and NH3 decomposition. Moreover, we devised conditions for controlling gas flow and interdiffusion to suppress polycrystal deposition around the source-gas nozzles. Experimental results aligned with simulations, showing that increasing the distance between Ga and NH3 nozzles and replacing the sheath gas from H2 to N2 effectively minimized polycrystal formation. The findings confirm that reducing NH3 concentration through catalytic surface decomposition on refractory components is crucial to polycrystal suppression. Optimizing nozzle dimensions and gas species synergistically controls the gas flow and interdiffusion. The constructed models contribute to advancing the design of polycrystal suppressive structures and conditions for long-duration bulk GaN growth. |
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言語 |
en |
| 出版者 |
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出版者 |
IEEE |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1109/TSM.2025.3558328 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0894-6507 |
| 書誌情報 |
en : IEEE Transactions on Semiconductor Manufacturing
巻 38,
号 2,
p. 311-323,
発行日 2025-05
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Accepted Paper_Maintext_H_Shimazu.pdf (5.5 MB)
