| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-11-04 |
| タイトル |
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タイトル |
Spectrally Narrow Blue-Light Emission from Nonstoichiometric AgGaS2 Quantum Dots for Application to Light-Emitting Diodes |
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言語 |
en |
| 著者 |
Tozawa, Makoto
Ofuji, Shuto
Tanaka, Mizuki
Akiyoshi, Kazutaka
Kameyama, Tatsuya
Yamamoto, Takahisa
Motomura, Genichi
Fujisaki, Yoshihide
Uematsu, Taro
Kuwabata, Susumu
Torimoto, Tsukasa
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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権利情報 |
This document is the Accepted Manuscript version of a Published Work that appeared in final form in [ACS Applied Materials & Interfaces], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [https://pubs.acs.org/articlesonrequest/AOR-DCYJTFYVGQN2AJBR5WI5].” |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
Luminescence color tuning of less toxic I–III–VI-based quantum dots (QDs) has been intensively investigated for application in wide-color-gamut displays. However, the emission peaks of these multinary QDs are relatively broad in the blue-light region compared to those in the green and red regions. Here, we report the synthesis of AgGaS2 (AGS) QDs that show a narrow blue emission peak through nonstoichiometry control and surface defect engineering. While as-prepared AGS QDs with angular shapes primarily exhibited a weak green photoluminescence (PL) peak at 520 nm assigned to defect-site emission, treatment with chloride ions resulted in the appearance of a sharp band-edge PL peak at 442 nm, with the number of surface defect sites decreasing as a result of rounding off the angles of the QD shape. Further coating of the QDs with a gallium sulfide (GaSx) shell selectively enhanced the band-edge PL peak at 446 nm with a narrow full width at half-maximum of 22 nm, where the defect-site emission was almost eliminated due to the removal of surface defect sites. The PL quantum yield (QY) significantly increased from 5.5% for chloride-treated AGS QDs to 12% for AGS core-GaSx shell QDs (AGS@GaSx). QD light-emitting diodes fabricated with AGS@GaSx QDs exhibited a sharp emission peak at 450 nm, slightly red-shifted from that of the PL spectrum of the QD films, accompanied by the reappearance of a weak broad defect-site emission peak at around 560 nm. |
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言語 |
en |
| 出版者 |
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出版者 |
ACS Publications |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
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|
出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1021/acsami.4c13987 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
1944-8244 |
| 書誌情報 |
en : ACS Applied Materials & Interfaces
巻 16,
号 49,
p. 68169-68180,
発行日 2025-12-11
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| ファイル公開日 |
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日付 |
2026-12-11 |
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日付タイプ |
Available |
am-2024-13987z.R1_Proof_hi.pdf (2.7 MB)
