| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-11-11 |
| タイトル |
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タイトル |
Self-assembling mechanism of Si-QDs on thermally grown SiO2 |
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言語 |
en |
| 著者 |
Baek, Jongeun
Imai, Yuki
Tsuji, Ryoya
Makihara, Katsunori
Miyazaki, Seiichi
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| アクセス権 |
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|
アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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|
権利情報 |
This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1347-4065/ad2fe1] |
|
言語 |
en |
| 権利 |
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|
権利情報 |
“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to” |
|
言語 |
en |
| 内容記述 |
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|
内容記述タイプ |
Abstract |
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内容記述 |
The self-assembling formation of Si quantum dots (Si-QDs) on as-grown SiO2 layers was shown by controlling the early stages of low-pressure chemical vapor deposition of SiH4. The QD height and radius distributions assessed by atomic force microscopy and scanning electron microscopy images revealed that the Si-QDs become hemispherical due to them being rate-limited by aggregation, which reduces the surface energy at substrate temperatures above ∼580 °C. Moreover, at temperatures below ∼580 °C, semi-ellipsoidal shaped Si-QDs are formed because the precursor supply is a dominant factor. |
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言語 |
en |
| 出版者 |
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出版者 |
IOP publishing |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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|
資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
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|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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|
関連タイプ |
isVersionOf |
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|
識別子タイプ |
DOI |
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|
関連識別子 |
https://doi.org/10.35848/1347-4065/ad2fe1 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
|
収録物識別子 |
0021-4922 |
| 書誌情報 |
en : Japanese Journal of Applied Physics
巻 63,
号 4,
p. 04SP36,
発行日 2024-04-05
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JJAP-RP_MNC2023_BAEK_31.pdf (995 KB)
