| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-12-09 |
| タイトル |
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タイトル |
SiN interlayer to improve external quantum efficiency and reduce sidewall recombination for blue (micro) light-emitting diodes |
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言語 |
en |
| 著者 |
Pristovsek, Markus
Park, Jeong-Hwan
Kwon, Woong
Cheong, Heajeong
Amano, Hiroshi
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| アクセス権 |
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アクセス権 |
embargoed access |
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アクセス権URI |
http://purl.org/coar/access_right/c_f1cf |
| 権利 |
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権利情報 |
Copyright 2025 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (APPLIED PHYSICS LETTERS. 127, 071101 (2025)) and may be found at (https://doi.org/10.1063/5.0272825). |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
We demonstrate that inserting a fractional monolayer of SiN below the first InGaN quantum well (QW) does not change the In content but increases the external quantum efficiency (EQE) of light-emitting diodes (LEDs) and reduces the sidewall recombination, together with a small redshift and slight broadening of the emission. At low currents, we could directly measure the reduced emission from the sidewall of 80 μm diameter circular LEDs by inserting an SiN interlayer. This points to a reduced lateral diffusion of carriers in the QWs via an enhanced composition fluctuation indicated by the broadening of x-ray diffraction satellite peaks in addition to the formation of V-defects. Thus, the SiN interlayer increases the carrier localization in the QWs, which increases the EQE of LEDs due to fewer carriers reaching the sidewall as well as dislocations and point defects. The lateral localization of carriers could also explain the large scattering of the reported size dependencies of micro LEDs. |
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言語 |
en |
| 出版者 |
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出版者 |
AIP Publishing |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1063/5.0272825 |
| 収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0003-6951 |
| 書誌情報 |
en : APPLIED PHYSICS LETTERS
巻 127,
号 7,
p. 071101,
発行日 2025-08-19
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| ファイル公開日 |
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日付 |
2026-08-19 |
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日付タイプ |
Available |
071101_1_5_0272825.pdf (2.5 MB)
