| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-12-09 |
| タイトル |
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タイトル |
InGaN-based blue and red micro-LEDs: Impact of carrier localization |
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言語 |
en |
| 著者 |
Park, Jeong-Hwan
Pristovsek, Markus
Han, Dong-Pyo
Kim, Bumjoon
Lee, Soo Min
Hanser, Drew
Parikh, Pritesh
Cai, Wentao
Shim, Jong-In
Lee, Dong-Seon
Seong, Tae-Yeon
Amano, Hiroshi
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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|
権利情報 |
Copyright 2024 Author(s). Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (APPLIED PHYSICS REVIEWS. 11, 041427 (2024)) and may be found at (https://doi.org/10.1063/5.0195261). |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
Herein, we investigate micro-light-emitting diodes (μLEDs) ranging in size from 160 × 160 to 10 × 10 μm2 and report that the differences in the behavior of InGaN-based blue (∼460 nm) and red (∼600 nm) μLEDs are related to carrier localization. The external quantum efficiency (EQE) of blue μLEDs decreases with size regardless of sidewall conditions, whereas that of red μLEDs is insignificant due to carrier localization. Atomic probe tomography examination of 30%, 15%, and 7.5% indium-concentrated InGaN layers used in red μLEDs shows that higher indium concentrations result in greater indium fluctuations, which promote carrier localization and thus shorten the diffusion length of carriers. Finally, by observing the peak wavelength of electroluminescence and the current density at peak EQE for both blue and red μLEDs, we find that radiative recombination rate in μLEDs is likely to be chip size dependent. |
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言語 |
en |
| 出版者 |
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出版者 |
AIP Publishing |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
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|
出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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|
関連識別子 |
https://doi.org/10.1063/5.0195261 |
| 収録物識別子 |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
1931-9401 |
| 書誌情報 |
en : APPLIED PHYSICS REVIEWS
巻 11,
号 4,
p. 041427,
発行日 2024-12-24
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| ファイル公開日 |
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|
日付 |
2025-12-24 |
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日付タイプ |
Available |
17_Appl_Phys_Rev_11_041427_2024.pdf (3.7 MB)
