| アイテムタイプ |
itemtype_ver1(1) |
| 公開日 |
2025-12-09 |
| タイトル |
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タイトル |
Growth and Characterization of High Internal Quantum Efficiency Semipolar (101̅3) GaN-Based Light Emitting Diodes |
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言語 |
en |
| 著者 |
Hu, Nan
Park, Jeong-Hwan
Wang, Jia
Amano, Hiroshi
Pristovsek, Markus
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| アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
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権利情報 |
This document is the Accepted Manuscript version of a Published Work that appeared in final form in [ACS Applied Electronic Materials], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [https://pubs.acs.org/articlesonrequest/AOR-RNCPFFYEYP4UXB9H4TI8].” |
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言語 |
en |
| 内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
We report on the growth and characterization of semipolar (101̅3) InGaN/GaN light-emitting diodes (LEDs) on m-plane (101̅0) sapphire with high internal quantum efficiencies (IQEs). Based on earlier work on obtaining untwinned (101̅3) GaN templates on m-plane sapphire, we also succeeded in smoothing the relatively unstable (101̅3) surface using very low V/III ratios during metal–organic vapor phase epitaxy and in the growth of n-and p-doped layers to produce LEDs. Fitting the current-dependent emission, we found high IQEs, up to 86% at 460 nm. The IQEs decreased toward longer wavelengths, similar as for conventional Ga-polar (0001) oriented LEDs. However, the semipolar (101̅3) LEDs have their maximum IQE at much higher current densities than the polar (0001) LEDs due to the higher overlap between electron and hole wave function while maintaining a positive polarization. Together, this makes the (101̅3) orientation very attractive for future blue LEDs. |
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言語 |
en |
| 出版者 |
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出版者 |
ACS Publications |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1021/acsaelm.4c01312 |
| 収録物識別子 |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
2637-6113 |
| 書誌情報 |
en : ACS Applied Electronic Materials
巻 6,
号 11,
p. 7960-7971,
発行日 2024-11-26
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LED103_Growth.pdf (745 KB)
